A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

doi:10.1088/1674-1056/21/5/056104

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 56104-056104.doi: 10.1088/1674-1056/21/5/056104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

王颖,焦文利,胡海帆,刘云涛,曹菲

College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China

收稿日期:2011-09-22 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60906048) and the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052).

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

Wang Ying(王颖)^†, Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲)

College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China

Received:2011-09-22 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60906048) and the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052).

摘要/Abstract

摘要： An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm² and 6.5 mΩ·mm² for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.

关键词: accumulation, Schottky source, reverse recovery time, leakage current

Abstract: An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 mΩ·mm² and 6.5 mΩ·mm² for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.

Key words: accumulation, Schottky source, reverse recovery time, leakage current

中图分类号: (Semiconductors)

61.82.Fk

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 78.40.Fy (Semiconductors) 85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))

王颖,焦文利,胡海帆,刘云涛,曹菲. A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier[J]. 中国物理B, 2012, 21(5): 56104-056104.

Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) . A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier[J]. Chin. Phys. B, 2012, 21(5): 56104-056104.

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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

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