[1] |
Yadong Wang(王亚东), Fujie Zhang(张富界), Xuri Rao(饶旭日), Haoran Feng(冯皓然),Liwei Lin(林黎蔚), Ding Ren(任丁), Bo Liu(刘波), and Ran Ang(昂然). Advancing thermoelectrics by suppressing deep-level defects in Pb-doped AgCrSe2 alloys[J]. 中国物理B, 2023, 32(4): 47202-047202. |
[2] |
Tao-Wen Xiong(熊涛文), Xiao-Ping Chen(陈小平), Ye-Ping Lin(林也平), Xin-Fu He(贺新福), Wen Yang(杨文), Wang-Yu Hu(胡望宇), Fei Gao(高飞), and Hui-Qiu Deng(邓辉球). Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy[J]. 中国物理B, 2023, 32(2): 20206-020206. |
[3] |
Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation[J]. 中国物理B, 2023, 32(1): 16701-016701. |
[4] |
Jiaqi Li(李嘉琪), Xinlu Cheng(程新路), and Hong Zhang(张红). Theoretical study of M6X2 and M6XX' structure (M = Au, Ag; X,X' = S, Se): Electronic and optical properties, ability of photocatalytic water splitting, and tunable properties under biaxial strain[J]. 中国物理B, 2022, 31(9): 97101-097101. |
[5] |
Zhiqiang Ye(叶志强), Yawei Lei(雷亚威), Jingdan Zhang(张静丹), Yange Zhang(张艳革), Xiangyan Li(李祥艳), Yichun Xu(许依春), Xuebang Wu(吴学邦), C. S. Liu(刘长松), Ting Hao(郝汀), and Zhiguang Wang(王志光). Effects of oxygen concentration and irradiation defects on the oxidation corrosion of body-centered-cubic iron surfaces: A first-principles study[J]. 中国物理B, 2022, 31(8): 86802-086802. |
[6] |
Yu Zhang(张钰), Liangguang Jia(贾亮广), Yaoyao Chen(陈瑶瑶), Lin He(何林), and Yeliang Wang(王业亮). Recent advances of defect-induced spin and valley polarized states in graphene[J]. 中国物理B, 2022, 31(8): 87301-087301. |
[7] |
Yutuo Guo(郭玉拓), Qinqin Wang(王琴琴), Xiaomei Li(李晓梅), Zheng Wei(魏争), Lu Li(李璐), Yalin Peng(彭雅琳), Wei Yang(杨威), Rong Yang(杨蓉), Dongxia Shi(时东霞), Xuedong Bai(白雪冬), Luojun Du(杜罗军), and Guangyu Zhang(张广宇). Direct visualization of structural defects in 2D semiconductors[J]. 中国物理B, 2022, 31(7): 76105-076105. |
[8] |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206. |
[9] |
Zhi-Hai Sun(孙志海), Jia-Xi Liu(刘佳溪), Ying Zhang(张颖), Zi-Yuan Li(李子源), Le-Yu Peng(彭乐宇), Peng-Ru Huang(黄鹏儒), Yong-Jin Zou(邹勇进), Fen Xu(徐芬), and Li-Xian Sun(孙立贤). Interfacial defect engineering and photocatalysis properties of hBN/MX2 (M = Mo, W, and X = S, Se heterostructures[J]. 中国物理B, 2022, 31(6): 67101-067101. |
[10] |
Ying-Zhe Wang(王颖哲), Mao-Sen Wang(王茂森), Ning Hua(化宁), Kai Chen(陈凯), Zhi-Min He(何志敏), Xue-Feng Zheng(郑雪峰), Pei-Xian Li(李培咸), Xiao-Hua Ma(马晓华), Li-Xin Guo(郭立新), and Yue Hao(郝跃). Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes[J]. 中国物理B, 2022, 31(6): 68101-068101. |
[11] |
Wei-Yuan Luo(罗韦媛), Wen-Feng Sun(孙文丰), Bo Li(黎波), Xia Xiang(向霞), Xiao-Long Jiang(蒋晓龙),Wei Liao(廖威), Hai-Jun Wang(王海军), Xiao-Dong Yuan(袁晓东),Xiao-Dong Jiang(蒋晓东), and Xiao-Tao Zu(祖小涛). Surface defects, stress evolution, and laser damage enhancement mechanism of fused silica under oxygen-enriched condition[J]. 中国物理B, 2022, 31(5): 54214-054214. |
[12] |
Shan Feng(冯山), Ming Jiang(姜明), Qi-Hang Qiu(邱启航), Xiang-Hua Peng(彭祥花), Hai-Yan Xiao(肖海燕), Zi-Jiang Liu(刘子江), Xiao-Tao Zu(祖小涛), and Liang Qiao(乔梁). First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice[J]. 中国物理B, 2022, 31(3): 36104-036104. |
[13] |
Jian-Hui Bai(白建会), Yin Yao(姚茵), and Ying-Zhao Jiang(姜英昭). Transition state and formation process of Stone—Wales defects in graphene[J]. 中国物理B, 2022, 31(3): 36102-036102. |
[14] |
Rangyue Zhang(张壤月), Guannan Shi(史冠男), Hanyu Tang(唐瀚宇), Yang Liu(刘阳), Yanhong Liu(刘艳红), and Feng Huang(黄峰). Effect of the number of defect particles on the structure and dispersion relation of a two-dimensional dust lattice system[J]. 中国物理B, 2022, 31(3): 35204-035204. |
[15] |
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华). Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2022, 31(3): 36103-036103. |