Recent advances of defect-induced spin and valley polarized states in graphene

doi:10.1088/1674-1056/ac70c4

中国物理B ›› 2022, Vol. 31 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/ac70c4

所属专题： TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B

Recent advances of defect-induced spin and valley polarized states in graphene

Yu Zhang(张钰)^1,2,†, Liangguang Jia(贾亮广)¹, Yaoyao Chen(陈瑶瑶)¹, Lin He(何林)³, and Yeliang Wang(王业亮)^1,‡

1 School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China;
2 Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China;
3 Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China

收稿日期:2022-04-12 修回日期:2022-05-16 接受日期:2022-05-18 出版日期:2022-07-18 发布日期:2022-07-27
通讯作者: Yu Zhang, Yeliang Wang E-mail:yzhang@bit.edu.cn;yeliang.wang@bit.edu.cn
基金资助:
This work is financial supported by the National Natural Science Foundation of China (Grant Nos. 92163206 and 61725107), the National Key Research and Development Program of China (Grant No. 2020YFA0308800), Beijing Natural Science Foundation (Grant No. Z190006), and China Postdoctoral Science Foundation (Grant No. 2021M700407).

Recent advances of defect-induced spin and valley polarized states in graphene

Yu Zhang(张钰)^1,2,†, Liangguang Jia(贾亮广)¹, Yaoyao Chen(陈瑶瑶)¹, Lin He(何林)³, and Yeliang Wang(王业亮)^1,‡

1 School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China;
2 Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China;
3 Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China

Received:2022-04-12 Revised:2022-05-16 Accepted:2022-05-18 Online:2022-07-18 Published:2022-07-27
Contact: Yu Zhang, Yeliang Wang E-mail:yzhang@bit.edu.cn;yeliang.wang@bit.edu.cn
Supported by:
This work is financial supported by the National Natural Science Foundation of China (Grant Nos. 92163206 and 61725107), the National Key Research and Development Program of China (Grant No. 2020YFA0308800), Beijing Natural Science Foundation (Grant No. Z190006), and China Postdoctoral Science Foundation (Grant No. 2021M700407).

摘要/Abstract

摘要： Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.

关键词: graphene, atomic-scale defect, broken symmetry, spin and valley polarized states

Abstract: Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.

Key words: graphene, atomic-scale defect, broken symmetry, spin and valley polarized states

中图分类号: (Electronic structure of graphene)

73.22.Pr

61.48.Gh (Structure of graphene) 61.72.jd (Vacancies)

Yu Zhang(张钰), Liangguang Jia(贾亮广), Yaoyao Chen(陈瑶瑶), Lin He(何林), and Yeliang Wang(王业亮). Recent advances of defect-induced spin and valley polarized states in graphene[J]. 中国物理B, 2022, 31(8): 87301-087301.

Yu Zhang(张钰), Liangguang Jia(贾亮广), Yaoyao Chen(陈瑶瑶), Lin He(何林), and Yeliang Wang(王业亮). Recent advances of defect-induced spin and valley polarized states in graphene[J]. Chin. Phys. B, 2022, 31(8): 87301-087301.

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Recent advances of defect-induced spin and valley polarized states in graphene

Recent advances of defect-induced spin and valley polarized states in graphene

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