中国物理B ›› 2021, Vol. 30 ›› Issue (11): 116104-116104.doi: 10.1088/1674-1056/abfd9e

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Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

Kai-Heng Shao(邵凯恒)1,2, Yu-Min Zhang(张育民)2,3, Jian-Feng Wang(王建峰)1,2,3,†, and Ke Xu(徐科)1,2,3,‡   

  1. 1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
    2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    3 Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China
  • 收稿日期:2021-02-23 修回日期:2021-04-20 接受日期:2021-05-01 出版日期:2021-10-13 发布日期:2021-11-06
  • 通讯作者: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

Kai-Heng Shao(邵凯恒)1,2, Yu-Min Zhang(张育民)2,3, Jian-Feng Wang(王建峰)1,2,3,†, and Ke Xu(徐科)1,2,3,‡   

  1. 1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
    2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences(CAS), Suzhou 215123, China;
    3 Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China
  • Received:2021-02-23 Revised:2021-04-20 Accepted:2021-05-01 Online:2021-10-13 Published:2021-11-06
  • Contact: Jian-Feng Wang, Ke Xu E-mail:jfwang2006@sinano.ac.cn;kxu2006@sinano.ac.cn

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摘要： The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.

关键词: GaN, dislocation, nanoindentation, cathodoluminescence, TEM

Abstract: The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.

Key words: GaN, dislocation, nanoindentation, cathodoluminescence, TEM

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)) 61.72.Lk (Linear defects: dislocations, disclinations)