中国物理B ›› 2021, Vol. 30 ›› Issue (11): 116104-116104.doi: 10.1088/1674-1056/abfd9e
Kai-Heng Shao(邵凯恒)1,2, Yu-Min Zhang(张育民)2,3, Jian-Feng Wang(王建峰)1,2,3,†, and Ke Xu(徐科)1,2,3,‡
Kai-Heng Shao(邵凯恒)1,2, Yu-Min Zhang(张育民)2,3, Jian-Feng Wang(王建峰)1,2,3,†, and Ke Xu(徐科)1,2,3,‡
摘要: The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.
中图分类号: (III-V and II-VI semiconductors)