中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97801-097801.doi: 10.1088/1674-1056/24/9/097801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation

刘俊岩, 宋鹏, 王飞, 王扬   

  1. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2015-02-12 修回日期:2015-03-19 出版日期:2015-09-05 发布日期:2015-09-05

Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation

Liu Jun-Yan (刘俊岩), Song Peng (宋鹏), Wang Fei (王飞), Wang Yang (王扬)   

  1. School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
  • Received:2015-02-12 Revised:2015-03-19 Online:2015-09-05 Published:2015-09-05
  • Contact: Wang Yang E-mail:ljywlj@hit.edu.cn

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摘要： A space monocrystalline silicon (c-Si) solar cell under low-energy (< 1 MeV) electron irradiation was investigated using noncontact photocarrier radiometry (PCR). Monte Carlo simulation (MCS) was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters (carrier lifetime, diffusion coefficient, and surface recombination velocities) were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si:p base of the solar cell at the irradiation electron energy of 1 MeV was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current (Isc) degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.

关键词: photocarrier radiometry, electron irradiation, silicon solar cell

Abstract: A space monocrystalline silicon (c-Si) solar cell under low-energy (< 1 MeV) electron irradiation was investigated using noncontact photocarrier radiometry (PCR). Monte Carlo simulation (MCS) was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters (carrier lifetime, diffusion coefficient, and surface recombination velocities) were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si:p base of the solar cell at the irradiation electron energy of 1 MeV was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current (Isc) degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.

Key words: photocarrier radiometry, electron irradiation, silicon solar cell

中图分类号:  (Photocarrier radiometry)

  • 78.56.Cd
88.40.jj (Silicon solar cells)