中国物理B ›› 2013, Vol. 22 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/22/12/127303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

张祥a, 刘邦武a, 赵彦b, 李超波a, 夏洋a   

  1. a Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    b Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2013-04-25 修回日期:2013-07-03 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

Zhang Xiang (张祥)a, Liu Bang-Wu (刘邦武)a, Zhao Yan (赵彦)b, Li Chao-Bo (李超波)a, Xia Yang (夏洋)a   

  1. a Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    b Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2013-04-25 Revised:2013-07-03 Online:2013-10-25 Published:2013-10-25
  • Contact: Liu Bang-Wu E-mail:liubangwu@ime.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High Technology Research and Development Program of China (Grant No. 2012AA052401).

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摘要： Chemical and field-effect passivation of atomic layer deposition (ALD) Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.

关键词: annealing, atomic layer deposition, Al2O3, passivation performance

Abstract: Chemical and field-effect passivation of atomic layer deposition (ALD) Al2O3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 ℃ and 500 ℃, while the improvement is quite weak at 600 ℃, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al2O3/Si interface structural change. The Al–OH groups play an important role in chemical passivation, and the Al–OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree.

Key words: annealing, atomic layer deposition, Al2O3, passivation performance

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
88.40.H- (Solar cells (photovoltaics)) 88.40.jj (Silicon solar cells)