中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57203-057203.doi: 10.1088/1674-1056/23/5/057203

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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

王向东a, 邓小川a, 王永维b, 王勇b, 文译a, 张波a   

  1. a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    b National Key Laboratory of ASIC, Shijiazhuang 050051, China
  • 收稿日期:2013-07-29 修回日期:2013-11-20 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006).

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

Wang Xiang-Dong (王向东)a, Deng Xiao-Chuan (邓小川)a, Wang Yong-Wei (王永维)b, Wang Yong (王勇)b, Wen Yi (文译)a, Zhang Bo (张波)a   

  1. a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    b National Key Laboratory of ASIC, Shijiazhuang 050051, China
  • Received:2013-07-29 Revised:2013-11-20 Online:2014-05-15 Published:2014-05-15
  • Contact: Deng Xiao-Chuan E-mail:xcdeng@uestc.edu.cn
  • About author:72.20.Ht; 73.30.+y; 85.30.Mn
  • Supported by:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006).

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摘要： This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

关键词: 4H-SiC, junction barrier Schottky rectifier, linearly graded field limiting ring, breakdown voltage

Abstract: This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

Key words: 4H-SiC, junction barrier Schottky rectifier, linearly graded field limiting ring, breakdown voltage

中图分类号:  (High-field and nonlinear effects)

  • 72.20.Ht
73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))