Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

doi:10.1088/1674-1056/23/4/047301

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/23/4/047301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

王妹, 王登京, 汪汝武, 李云宝

Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China

收稿日期:2013-07-25 修回日期:2013-10-17 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

Wang Mei (王妹), Wang Deng-Jing (王登京), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝)

Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China

Received:2013-07-25 Revised:2013-10-17 Online:2014-04-15 Published:2014-04-15
Contact: Wang Deng-Jing E-mail:d.j.wang@163.com
About author:73.40.Lq; 73.40.Ei; 75.47.Gk
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

摘要/Abstract

摘要： A manganite p-n heterojunction composed of La_0.67Sr_0.33MnO₃ film and 0.05 wt% Nb-doped SrTiO₃ substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R-1/T curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.

关键词: manganite, heterojunction, interfacial barrier

Abstract: A manganite p-n heterojunction composed of La_0.67Sr_0.33MnO₃ film and 0.05 wt% Nb-doped SrTiO₃ substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R-1/T curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.

Key words: manganite, heterojunction, interfacial barrier

中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Lq

73.40.Ei (Rectification) 75.47.Gk (Colossal magnetoresistance)

王妹, 王登京, 汪汝武, 李云宝. Direct measurement of the interfacial barrier height of the manganite p-n heterojunction[J]. 中国物理B, 2014, 23(4): 47301-047301.

Wang Mei (王妹), Wang Deng-Jing (王登京), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝). Direct measurement of the interfacial barrier height of the manganite p-n heterojunction[J]. Chin. Phys. B, 2014, 23(4): 47301-047301.

参考文献 16

[1]	Sugiura M, Uragou K, Noda M, Tachiki M and Kobayashi T 1999 Jpn. J. Appl. Phys., Part 1 38 2675
[2]	Sun J R, Shen B G, Sheng Z G and Sun Y P 2004 Appl. Phys. Lett. 85 3375
[3]	Liu Y K, Yin Y W and Li X G 2013 Chin. Phys. B 22 087502
[4]	Sheng Z G, Zhao B C, Song W H, Sun Y P, Sun J R and Shen B G 2005 Appl. Phys. Lett. 87 242501
[5]	Chen Y F, Ziese M and Esquinazi P 2007 J. Appl. Phys. 101 123906
[6]	Yajima T, Hikita Y and Hwang H Y 2011 Nat. Mater. 10 198
[7]	Sawa A, Fujii T, Kawasaki M and Tokurad Y 2005 Appl. Phys. Lett. 86 112508
[8]	Cuellar F A, Sanchez-Santolino G, Varela M, Clement M, Iborra E, Sefrioui Z, Santamaria J and Leon C 2012 Phys. Rev. B 85 245122
[9]	Xie Y W, Guo D F, Sun J R and Shen B G 2010 Chin. Phys. B 19 117306
[10]	Postma F M, Ramaneti R, Banerjee T, Gokcan H, Haq E, Blan kDHA, Jansen R and Lodder J C 2004 J. Appl. Phys. 95 7324
[11]	Lü W M, Sun J R, Wang D J, Xie Y W, Liang S, Chen Y Z and Shen B G 2008 Appl. Phys. Lett. 92 062503
[12]	Wang D J, Sun J R, Lü W M, Xie Y W, Liang S and Shen B G 2007 J. Phys. D: Appl. Phys. 40 5075
[13]	Wang D J, Xie Y W, Xiong C M, Shen B G and Sun J R 2006 Europhys. Lett. 73 401
[14]	Sze S M 1998 Physics of Semiconductor Devices, 2nd edn. (New York: Wiley)
[15]	Anderson R L 1962 Solid-State Electron. 5 341
[16]	Lü W M, Wei A D, Sun J R, Chen Y Z and Shen B G 2009 Appl. Phys. Lett. 94 082506

Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor[J]. 中国物理B, 2023, 32(3): 37302-037302.
[2]	Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction[J]. 中国物理B, 2023, 32(3): 37401-037401.
[3]	Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu₂ZnSn(S, Se)⁴ solar cell[J]. 中国物理B, 2023, 32(2): 28801-028801.
[4]	Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction[J]. 中国物理B, 2023, 32(2): 27504-027504.
[5]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[6]	Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.
[7]	Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401.
[8]	Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi₂N₄/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101.
[9]	Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(8): 86106-086106.
[10]	Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(6): 68502-068502.
[11]	Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Graphene-based heterojunction for enhanced photodetectors[J]. 中国物理B, 2022, 31(3): 38501-038501.
[12]	Zhao Wang(王昭), Shu-Xing Fan(范树兴), and Wei Tang(唐伟). SnO₂/Co₃O₄ nanofibers using double jets electrospinning as low operating temperature gas sensor[J]. 中国物理B, 2022, 31(2): 28101-028101.
[13]	Wei-Ming Sun(孙伟铭), Bing-Yang Sun(孙兵阳), Shan Li(李山), Guo-Liang Ma(麻国梁), Ang Gao(高昂), Wei-Yu Jiang(江为宇), Mao-Lin Zhang(张茂林), Pei-Gang Li(李培刚), Zeng Liu(刘增), and Wei-Hua Tang(唐为华). A broadband self-powered UV photodetector of a β-Ga₂O₃/γ-CuI p-n junction[J]. 中国物理B, 2022, 31(2): 24205-024205.
[14]	Shan Qiu(邱珊), Jia-Hao Liu(刘嘉豪), Ya-Bo Chen(陈亚博), Yun-Ping Zhao(赵云平), Bo Wei(危波), and Liang Fang(方粮). Skyrmion transport driven by pure voltage generated strain gradient[J]. 中国物理B, 2022, 31(11): 117701-117701.
[15]	Sheng-Long Ran(冉胜龙), Zhi-Yong Huang(黄智勇), Sheng-Dong Hu(胡盛东), Han Yang(杨晗), Jie Jiang(江洁), and Du Zhou(周读). A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode[J]. 中国物理B, 2022, 31(1): 18504-018504.