中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46805-046805.doi: 10.1088/1674-1056/23/4/046805

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Two crucial factors influencing quality of GaAs on Ge substrate

邓闯a b, 门传玲a, 陈达b   

  1. a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
    b State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2013-08-07 修回日期:2013-10-04 出版日期:2014-04-15 发布日期:2014-04-15
  • 基金资助:
    Project supported by the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1428200).

Two crucial factors influencing quality of GaAs on Ge substrate

Deng Chuang (邓闯)a b, Men Chuan-Ling (门传玲)a, Chen Da (陈达)b   

  1. a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
    b State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2013-08-07 Revised:2013-10-04 Online:2014-04-15 Published:2014-04-15
  • Contact: Men Chuan-Ling E-mail:anziloveling@126.com
  • About author:68.35.Fx; 68.35.Ja; 68.35.Md
  • Supported by:
    Project supported by the Shanghai Municipal Natural Science Foundation, China (Grant No. 13ZR1428200).

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摘要： High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.

关键词: molecular beam epitaxy, low temperature annealing, low temperature epitaxy

Abstract: High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.

Key words: molecular beam epitaxy, low temperature annealing, low temperature epitaxy

中图分类号:  (Diffusion; interface formation)

  • 68.35.Fx
68.35.Ja (Surface and interface dynamics and vibrations) 68.35.Md (Surface thermodynamics, surface energies)