中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97105-097105.doi: 10.1088/1674-1056/21/9/097105

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

滕晓云, 吴艳华, 于威, 高卫, 傅广生   

  1. College of Physics Science and Technology, University of Hebei University, Baoding 071002, China
  • 收稿日期:2011-12-29 修回日期:2012-02-21 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the Postdoctor Foundation of Hebei Province, China, the Natural Science Foundation of Hebei Province, China (Grant No. F2012201093), and the Natural Science Foundation of Hebei University, China (Grant No. 2008127).

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

Teng Xiao-Yun (滕晓云), Wu Yan-Hua (吴艳华), Yu Wei (于威), Gao Wei (高卫), Fu Guang-Sheng (傅广生)   

  1. College of Physics Science and Technology, University of Hebei University, Baoding 071002, China
  • Received:2011-12-29 Revised:2012-02-21 Online:2012-08-01 Published:2012-08-01
  • Contact: Teng Xiao-Yun E-mail:xyteng@hbu.edu.cn
  • Supported by:
    Project supported by the Postdoctor Foundation of Hebei Province, China, the Natural Science Foundation of Hebei Province, China (Grant No. F2012201093), and the Natural Science Foundation of Hebei University, China (Grant No. 2008127).

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摘要： The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V < V < 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V >0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively.

关键词: ZnO/Si heterostructure, current transport, laser molecular beam epitaxy

Abstract: The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V < V < 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V >0.6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively.

Key words: ZnO/Si heterostructure, current transport, laser molecular beam epitaxy

中图分类号:  (II-VI semiconductors)

  • 71.55.Gs
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.15.Fg (Pulsed laser ablation deposition)