Effect of thickness on the microstructure of GaN films on Al2O3 (0001) by laser molecular beam epitaxy

doi:10.1088/1674-1056/20/10/108102

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108102-108102.doi: 10.1088/1674-1056/20/10/108102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy

刘莹莹, 朱俊, 罗文博, 郝兰众, 张鹰, 李言荣

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2011-03-03 修回日期:2011-04-18 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the Major State Basic Research Development Program of China (Grant No. 61363) and the National Natural Science Foundation of China (Grant Nos. 50772019 and 61021061).

Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy

Liu Ying-Ying(刘莹莹), Zhu Jun(朱俊)^†, Luo Wen-Bo(罗文博), Hao Lan-Zhong(郝兰众), Zhang Ying(张鹰), and Li Yan-Rong(李言荣)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2011-03-03 Revised:2011-04-18 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the Major State Basic Research Development Program of China (Grant No. 61363) and the National Natural Science Foundation of China (Grant Nos. 50772019 and 61021061).

摘要/Abstract

摘要： Heteroepitaxial GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

Abstract: Heteroepitaxial GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

Key words: reflection high energy electron diffraction, thin films, laser molecular beam epitaxy, GaN, sapphires

中图分类号: (Laser-assisted deposition)

81.16.Mk

61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)) 68.55.-a (Thin film structure and morphology) 78.55.Cr (III-V semiconductors)

刘莹莹, 朱俊, 罗文博, 郝兰众, 张鹰, 李言荣. Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy[J]. 中国物理B, 2011, 20(10): 108102-108102.

Liu Ying-Ying(刘莹莹), Zhu Jun(朱俊), Luo Wen-Bo(罗文博), Hao Lan-Zhong(郝兰众), Zhang Ying(张鹰), and Li Yan-Rong(李言荣) . Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy[J]. Chin. Phys. B, 2011, 20(10): 108102-108102.

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Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy

Effect of thickness on the microstructure of GaN films on Al₂O₃ (0001) by laser molecular beam epitaxy

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