High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

doi:10.1088/1674-1056/22/9/097302

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/22/9/097302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

郑柳^a, 张峰^a, 刘胜北^a, 董林^a, 刘兴昉^a, 樊中朝^b, 刘斌^a, 闫果果^a, 王雷^a, 赵万顺^a, 孙国胜^a, 何志^a, 杨富华^b

a Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2012-12-13 修回日期:2013-03-13 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51102225), the Natural Science Foundation of Beijing City, China (Grant No. 4132076), and the Youth Innovation Promotion Association, Chinese Academy of Sciences.

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

Zheng Liu (郑柳)^a, Zhang Feng (张峰)^a, Liu Sheng-Bei (刘胜北)^a, Dong Lin (董林)^a, Liu Xing-Fang (刘兴昉)^a, Fan Zhong-Chao (樊中朝)^b, Liu Bin (刘斌)^a, Yan Guo-Guo (闫果果)^a, Wang Lei (王雷)^a, Zhao Wan-Shun (赵万顺)^a, Sun Guo-Sheng (孙国胜)^a, He Zhi (何志)^a, Yang Fu-Hua (杨富华)^b

a Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2012-12-13 Revised:2013-03-13 Online:2013-07-26 Published:2013-07-26
Contact: Zhang Feng E-mail:fzhang@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51102225), the Natural Science Foundation of Beijing City, China (Grant No. 4132076), and the Youth Innovation Promotion Association, Chinese Academy of Sciences.

摘要/Abstract

摘要： 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm² with a total active area of 2.46×10^-3 cm². Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

关键词: 4H-SiC, junction barrier Schottky (JBS) diode, high-temperature annealed resistive termination extension (HARTE)

Abstract: 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm² with a total active area of 2.46×10^-3 cm². Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

Key words: 4H-SiC, junction barrier Schottky (JBS) diode, high-temperature annealed resistive termination extension (HARTE)

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

73.40.Sx (Metal-semiconductor-metal structures)

郑柳, 张峰, 刘胜北, 董林, 刘兴昉, 樊中朝, 刘斌, 闫果果, 王雷, 赵万顺, 孙国胜, 何志, 杨富华. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions[J]. 中国物理B, 2013, 22(9): 97302-097302.

Zheng Liu (郑柳), Zhang Feng (张峰), Liu Sheng-Bei (刘胜北), Dong Lin (董林), Liu Xing-Fang (刘兴昉), Fan Zhong-Chao (樊中朝), Liu Bin (刘斌), Yan Guo-Guo (闫果果), Wang Lei (王雷), Zhao Wan-Shun (赵万顺), Sun Guo-Sheng (孙国胜), He Zhi (何志), Yang Fu-Hua (杨富华). High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions[J]. Chin. Phys. B, 2013, 22(9): 97302-097302.

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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

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