中国物理B ›› 2013, Vol. 22 ›› Issue (8): 88104-088104.doi: 10.1088/1674-1056/22/8/088104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

倪毅强, 贺致远, 钟健, 姚尧, 杨帆, 向鹏, 张佰君, 刘扬   

  1. School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2012-12-22 修回日期:2013-02-04 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB923200), the National "863" Project of China (Grant No. 2011AA03A101), the Foundation of the Key Technologies R & D Program of Guangdong Province, China (Grant No. 2007A010500011), the International Science and Technology Cooperation Program of China (Grant No. 2012DFG52260), and the National Science Foundation of China-Guangdong Province Jointed Foundation (Grant No. U0834001).

Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Zhong Jian (钟健), Yao Yao (姚尧), Yang Fan (杨帆), Xiang Peng (向鹏), Zhang Bai-Jun (张佰君), Liu Yang (刘扬)   

  1. School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2012-12-22 Revised:2013-02-04 Online:2013-06-27 Published:2013-06-27
  • Contact: Liu Yang E-mail:liuy69@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB923200), the National "863" Project of China (Grant No. 2011AA03A101), the Foundation of the Key Technologies R & D Program of Guangdong Province, China (Grant No. 2007A010500011), the International Science and Technology Cooperation Program of China (Grant No. 2012DFG52260), and the National Science Foundation of China-Guangdong Province Jointed Foundation (Grant No. U0834001).

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摘要： The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.

关键词: metal-organic chemical-vapour deposition, GaN-on-Si, electrical behavior, low-temperature AlN interlayers

Abstract: The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) AlN interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the Al atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-AlN, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.

Key words: metal-organic chemical-vapour deposition, GaN-on-Si, electrical behavior, low-temperature AlN interlayers

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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