Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

doi:10.1088/1674-1056/22/7/076804

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76804-076804.doi: 10.1088/1674-1056/22/7/076804

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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

郝昕, 陈远富, 王泽高, 刘竞博, 贺加瑞, 李言荣

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2013-02-18 修回日期:2013-02-27 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0291), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041).

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2013-02-18 Revised:2013-02-27 Online:2013-06-01 Published:2013-06-01
Contact: Chen Yuan-Fu E-mail:yfchen@uestc.edu.cn
Supported by:
Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0291), the Startup Research Project of University of Electronic Science and Technology of China (Grant No. Y02002010301041).

摘要/Abstract

摘要： Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination of xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Strong photoelectrical response makes it promising for optoelectronic applications.

关键词: epitaxial graphene, photoelectrical response, oxygen absorption

Abstract: Photoelectrical response characteristics of epitaxial graphene (EG) films on Si-and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination of xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Strong photoelectrical response makes it promising for optoelectronic applications.

Key words: epitaxial graphene, photoelectrical response, oxygen absorption

中图分类号: (Graphene films)

68.65.Pq

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 78.67.Wj (Optical properties of graphene)

郝昕, 陈远富, 王泽高, 刘竞博, 贺加瑞, 李言荣. Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC[J]. 中国物理B, 2013, 22(7): 76804-076804.

Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣). Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC[J]. Chin. Phys. B, 2013, 22(7): 76804-076804.

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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

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