中国物理B ›› 2018, Vol. 27 ›› Issue (9): 94208-094208.doi: 10.1088/1674-1056/27/9/094208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Thermal analysis of GaN-based laser diode mini-array

Jun-Jie Hu(胡俊杰), Shu-Ming Zhang(张书明), De-Yao Li(李德尧), Feng Zhang(张峰), Mei-Xin Feng(冯美鑫), Peng-Yan Wen(温鹏雁), Jian-Pin Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉)   

  1. 1 Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-04-03 修回日期:2018-05-10 出版日期:2018-09-05 发布日期:2018-09-05
  • 通讯作者: Shu-Ming Zhang E-mail:smzhang2010@sinano.ac.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402002, 2016YFB0401803, 2017YFB0405002, 2017YFB0405003, and 2017YFB0405005), the National Natural Science Foundation of China (Grant Nos. 61574160, 61704184, and 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (Grant No. XDA09020401), the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No. 2013T2J0048), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20170430), and the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows, China (Grant No. 2016LH0026).

Thermal analysis of GaN-based laser diode mini-array

Jun-Jie Hu(胡俊杰)1,2, Shu-Ming Zhang(张书明)1, De-Yao Li(李德尧)1, Feng Zhang(张峰)1, Mei-Xin Feng(冯美鑫)1, Peng-Yan Wen(温鹏雁)1, Jian-Pin Liu(刘建平)1, Li-Qun Zhang(张立群)1, Hui Yang(杨辉)1   

  1. 1 Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-04-03 Revised:2018-05-10 Online:2018-09-05 Published:2018-09-05
  • Contact: Shu-Ming Zhang E-mail:smzhang2010@sinano.ac.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402002, 2016YFB0401803, 2017YFB0405002, 2017YFB0405003, and 2017YFB0405005), the National Natural Science Foundation of China (Grant Nos. 61574160, 61704184, and 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (Grant No. XDA09020401), the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No. 2013T2J0048), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20170430), and the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows, China (Grant No. 2016LH0026).

摘要:

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

关键词: GaN laser diode, laser diode array, thermal analysis, temperature distribution

Abstract:

Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

Key words: GaN laser diode, laser diode array, thermal analysis, temperature distribution

中图分类号:  (Semiconductor lasers; laser diodes)

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