中国物理B ›› 2012, Vol. 21 ›› Issue (11): 118502-118502.doi: 10.1088/1674-1056/21/11/118502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

童金辉, 李述体, 卢太平, 刘超, 王海龙, 仵乐娟, 赵璧君, 王幸福, 陈鑫   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2012-04-08 修回日期:2012-06-04 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

Tong Jin-Hui (童金辉), Li Shu-Ti (李述体), Lu Tai-Ping (卢太平), Liu Chao (刘超), Wang Hai-Long (王海龙), Wu Le-Juan (仵乐娟), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫 )   

  1. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2012-04-08 Revised:2012-06-04 Online:2012-10-01 Published:2012-10-01
  • Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou, China (Grant No. 2011J4300018).

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摘要： The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells (QWs) when the InGaN/GaN multilayer barriers are used.

关键词: GaN based light-emitting diode, InGaN/GaN multilayer barriers, electrostatic field

Abstract: The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied. It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power, lower current leakage, and less efficiency droop over its conventional InGaN/GaN counterparts. Based on the numerical simulation and analysis, these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells (QWs) when the InGaN/GaN multilayer barriers are used.

Key words: GaN based light-emitting diode, InGaN/GaN multilayer barriers, electrostatic field

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)