中国物理B ›› 2013, Vol. 22 ›› Issue (5): 57106-057106.doi: 10.1088/1674-1056/22/5/057106

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High sensitivity Hall devices with AlSb/InAs quantum well structures

张杨a b, 张雨溦b, 王成艳b, 关敏b, 崔利杰b, 李弋洋b, 王宝强b, 朱战平b, 曾一平b   

  1. a Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China;
    b Material Science Center，Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2012-09-19 修回日期:2012-10-23 出版日期:2013-04-01 发布日期:2013-04-01
  • 基金资助:
    Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences, China (Grant No. ISCAS2009T04), the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049), the Beijing Natural Science Foundation of Beijing, China (Grant No. 2112040), and the Beijing Nova Program, China (Grant No. 2010B056).

High sensitivity Hall devices with AlSb/InAs quantum well structures

Zhang Yang (张杨)a b, Zhang Yu-Wei (张雨溦)b, Wang Cheng-Yan (王成艳)b, Guan Min (关敏)b, Cui Li-Jie (崔利杰)b, Li Yi-Yang (李弋洋)b, Wang Bao-Qiang (王宝强)b, Zhu Zhan-Ping (朱战平)b, Zeng Yi-Ping (曾一平)b   

  1. a Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China;
    b Material Science Center，Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2012-09-19 Revised:2012-10-23 Online:2013-04-01 Published:2013-04-01
  • Contact: Zhang Yang E-mail:zhang_yang@semi.ac.cn
  • Supported by:
    Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences, China (Grant No. ISCAS2009T04), the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049), the Beijing Natural Science Foundation of Beijing, China (Grant No. 2112040), and the Beijing Nova Program, China (Grant No. 2010B056).

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摘要： AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

关键词: antimonide semiconductors, quantum well, molecular beam epitaxy

Abstract: AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

Key words: antimonide semiconductors, quantum well, molecular beam epitaxy

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)) 73.40.-c (Electronic transport in interface structures)