[1] |
Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Strain compensated type II superlattices grown by molecular beam epitaxy[J]. 中国物理B, 2023, 32(4): 46802-046802. |
[2] |
Shu-Fang Ma(马淑芳), Lei Li(李磊), Qing-Bo Kong(孔庆波), Yang Xu(徐阳), Qing-Ming Liu(刘青明), Shuai Zhang(张帅), Xi-Shu Zhang(张西数), Bin Han(韩斌), Bo-Cang Qiu(仇伯仓), Bing-She Xu(许并社), and Xiao-Dong Hao(郝晓东). Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2023, 32(3): 37801-037801. |
[3] |
Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801. |
[4] |
Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Selective formation of ultrathin PbSe on Ag(111)[J]. 中国物理B, 2022, 31(9): 96801-096801. |
[5] |
Yong-Huan Wang(王永欢), Yun Zhang(张云), Yu Liu(刘瑜), Xiao Tan(谈笑), Ce Ma(马策), Yue-Chao Wang(王越超), Qiang Zhang(张强), Deng-Peng Yuan(袁登鹏), Dan Jian(简单), Jian Wu(吴健), Chao Lai(赖超), Xi-Yang Wang(王西洋), Xue-Bing Luo(罗学兵), Qiu-Yun Chen(陈秋云), Wei Feng(冯卫), Qin Liu(刘琴), Qun-Qing Hao(郝群庆), Yi Liu(刘毅), Shi-Yong Tan(谭世勇), Xie-Gang Zhu(朱燮刚), Hai-Feng Song(宋海峰), and Xin-Chun Lai(赖新春). Effect of f-c hybridization on the $\gamma\to \alpha$ phase transition of cerium studied by lanthanum doping[J]. 中国物理B, 2022, 31(8): 87102-087102. |
[6] |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206. |
[7] |
Jing-Peng Song(宋靖鹏) and Ang Li(李昂). Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene[J]. 中国物理B, 2022, 31(3): 37401-037401. |
[8] |
Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208. |
[9] |
Zhaojun Liu(刘昭君), Lian-Qing Zhu(祝连庆), Xian-Tong Zheng(郑显通), Yuan Liu(柳渊), Li-Dan Lu(鹿利单), and Dong-Liang Zhang(张东亮). Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy[J]. 中国物理B, 2022, 31(12): 128503-128503. |
[10] |
Ke He(何珂). Molecular beam epitaxy growth of quantum devices[J]. 中国物理B, 2022, 31(12): 126804-126804. |
[11] |
Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface[J]. 中国物理B, 2022, 31(11): 117201-117201. |
[12] |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801. |
[13] |
Zhen-Hua Li(李振华), Peng-Fei Shao(邵鹏飞), Gen-Jun Shi(施根俊), Yao-Zheng Wu(吴耀政), Zheng-Peng Wang(汪正鹏), Si-Qi Li(李思琦), Dong-Qi Zhang(张东祺), Tao Tao(陶涛), Qing-Jun Xu(徐庆君), Zi-Li Xie(谢自力), Jian-Dong Ye(叶建东), Dun-Jun Chen(陈敦军), Bin Liu(刘斌), Ke Wang(王科), You-Dou Zheng(郑有炓), and Rong Zhang(张荣). Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties[J]. 中国物理B, 2022, 31(1): 18102-018102. |
[14] |
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers[J]. 中国物理B, 2021, 30(9): 94204-094204. |
[15] |
Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films[J]. 中国物理B, 2021, 30(9): 97801-097801. |