中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117307-117307.doi: 10.1088/1674-1056/22/11/117307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

赵胜雷a, 陈伟伟b, 岳童a, 王毅a, 罗俊a, 毛维a, 马晓华a b, 郝跃a   

  1. a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    b School of Technical Physics, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-03-26 修回日期:2013-04-22 出版日期:2013-09-28 发布日期:2013-09-28
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant No. 61204085).

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Zhao Sheng-Lei (赵胜雷)a, Chen Wei-Wei (陈伟伟)b, Yue Tong (岳童)a, Wang Yi (王毅)a, Luo Jun (罗俊)a, Mao Wei (毛维)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a   

  1. a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    b School of Technical Physics, Xidian University, Xi’an 710071, China
  • Received:2013-03-26 Revised:2013-04-22 Online:2013-09-28 Published:2013-09-28
  • Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915) and the National Natural Science Foundation of China (Grant No. 61204085).

摘要: In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.

关键词: AlGaN/GaN high electron mobility transistor, forward blocking voltage, drain field plate

Abstract: In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.

Key words: AlGaN/GaN high electron mobility transistor, forward blocking voltage, drain field plate

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)