中国物理B ›› 2006, Vol. 15 ›› Issue (8): 1879-1882.doi: 10.1088/1009-1963/15/8/041

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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer

黎沛涛1, 陈铸略1, 陈卫兵2, 徐静平2, 李艳萍2, 许胜国2   

  1. (1)Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong; (2)Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2006-03-09 修回日期:2006-05-17 出版日期:2006-08-20 发布日期:2006-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60376019).

Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer

Chen Wei-Bing(陈卫兵)a)†, Xu Jing-Ping(徐静平)a), Lai Pui-To(黎沛涛)b), Li Yan-Ping(李艳萍)a), Xu Sheng-Guo(许胜国)a), and Chan Chu-Lok(陈铸略)b)   

  1. a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China
  • Received:2006-03-09 Revised:2006-05-17 Online:2006-08-20 Published:2006-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60376019).

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摘要： The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas ambiences of N2, NO and NH3 at 600℃ for 2 min. Capacitance--voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si \equiv N bonds to passivate dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability.

关键词: metal-oxide-semiconductor capacitors, HfTiON, capacitance--voltage characteristics, leakage current, interlayer

Abstract: The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas ambiences of N2, NO and NH3 at 600℃ for 2 min. Capacitance--voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si $\equiv $ N bonds to passivate dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability.

Key words: metal-oxide-semiconductor capacitors, HfTiON, capacitance--voltage characteristics, leakage current, interlayer

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
84.32.Tt (Capacitors) 85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)