中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/22/10/107302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

薛百清, 王盛凯, 韩乐, 常虎东, 孙兵, 赵威, 刘洪刚   

  1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2013-03-26 修回日期:2013-05-06 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚)   

  1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2013-03-26 Revised:2013-05-06 Online:2013-08-30 Published:2013-08-30
  • Contact: Wang Sheng-Kai, Liu Hong-Gang E-mail:wangshengkai@ime.ac.cn;liuhonggang@ime.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

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摘要： To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor (MOS) interface by analyzing the electrical characteristics of HCl-and (NH4)2S-passivated samples.

关键词: Ge, MOSFET, high-k dielectric, mobility

Abstract: To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor (MOS) interface by analyzing the electrical characteristics of HCl-and (NH4)2S-passivated samples.

Key words: Ge, MOSFET, high-k dielectric, mobility

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
71.55.Eq (III-V semiconductors)