中国物理B ›› 2005, Vol. 14 ›› Issue (12): 2595-2597.doi: 10.1088/1009-1963/14/12/035

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Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

黄延红1, 吕惠宾1, 赵昆2, 丰家峰3, 赵见高3, 韩秀峰3, 詹文山3   

  1. (1)Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences,Beijing 100080, China; (2)Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences,Beijing 100080, China;International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016,; (3)State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences,Beijing 100080, China
  • 收稿日期:2005-05-31 修回日期:2005-09-19 出版日期:2005-12-20 发布日期:2005-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10334070 and 50371102) and China Postdoctoral Science Foundation.

Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

Zhao Kun (赵昆)ac, Feng Jia-Feng (丰家峰)b, Huang Yan-Hong (黄延红)a, Zhao Jian-Gao (赵见高)b, Lü Hui-Bin (吕惠宾)a, Han Xiu-Feng (韩秀峰)b, Zhan Wen-Shan (詹文山)b   

  1. a Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
  • Received:2005-05-31 Revised:2005-09-19 Online:2005-12-20 Published:2005-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 10334070 and 50371102) and China Postdoctoral Science Foundation.

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摘要： We have investigated the transport and ultraviolet photovoltaic properties of Fe$_{3}$O$_{4}$ thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe$_{3}$O$_{4}$ film under ultraviolet laser, since the energy gap of Fe$_{3}$O$_{4}$ is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.

关键词: photovoltaic effect, magnetite, thin film

Abstract: We have investigated the transport and ultraviolet photovoltaic properties of Fe$_{3}$O$_{4}$ thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe$_{3}$O$_{4}$ film under ultraviolet laser, since the energy gap of Fe$_{3}$O$_{4}$ is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.

Key words: photovoltaic effect, magnetite, thin film

中图分类号:  (Photoconduction and photovoltaic effects)

  • 73.50.Pz
75.70.Ak (Magnetic properties of monolayers and thin films) 75.47.Pq (Other materials) 68.37.Ps (Atomic force microscopy (AFM))