中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106105-106105.doi: 10.1088/1674-1056/22/10/106105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Optical and magnetic properties of InFeP layers prepared by Fe+ implantation

周霖a b, 尚艳霞a b, 王泽松a, 张瑞a, 张早娣a, Vasiliy O. Pelenovicha, 付德君a, Kang Tae Wonb   

  1. a School of Physics and Technology, Wuhan University, Wuhan 430072, China;
    b Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100715, Korea
  • 收稿日期:2013-03-14 修回日期:2013-04-22 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the International Cooperation Program of the Ministry of Science and Technology, China (Grant No. 2011DFR50580) and the Fundamental Research Funds for the Central Universities, China (Grant No. 20102020101000022).

Optical and magnetic properties of InFeP layers prepared by Fe+ implantation

Zhou Lin (周霖)a b, Shang Yan-Xia (尚艳霞)a b, Wang Ze-Song (王泽松)a, Zhang Rui (张瑞)a, Zhang Zao-Di (张早娣)a, Vasiliy O. Pelenovicha, Fu De-Jun (付德君)a, Kang Tae Wonb   

  1. a School of Physics and Technology, Wuhan University, Wuhan 430072, China;
    b Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100715, Korea
  • Received:2013-03-14 Revised:2013-04-22 Online:2013-08-30 Published:2013-08-30
  • Contact: Fu De-Jun E-mail:djfu@whu.edu.cn
  • Supported by:
    Project supported by the International Cooperation Program of the Ministry of Science and Technology, China (Grant No. 2011DFR50580) and the Fundamental Research Funds for the Central Universities, China (Grant No. 20102020101000022).

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摘要： InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5×1016 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400 ℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 Oe (1 Oe=79.5775 A·m-1), saturation magnetization of 4.35×10-5 emu, and remnant magnetization of 4.4×10-6 emu.

关键词: ion implantation, diluted magnetic semiconductor, photoluminescence, Rutherford backscattering/channeling

Abstract: InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5×1016 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400 ℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 Oe (1 Oe=79.5775 A·m-1), saturation magnetization of 4.35×10-5 emu, and remnant magnetization of 4.4×10-6 emu.

Key words: ion implantation, diluted magnetic semiconductor, photoluminescence, Rutherford backscattering/channeling

中图分类号:  (Doping and impurity implantation)

  • 61.72.U-
75.50.Pp (Magnetic semiconductors) 78.30.Fs (III-V and II-VI semiconductors)