Effect of vacancy charge state on positron annihilation in silicon

doi:10.1088/1674-1056/22/10/106104

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 106104-106104.doi: 10.1088/1674-1056/22/10/106104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effect of vacancy charge state on positron annihilation in silicon

刘建党^{a b}, 成斌^{a b}, 孔伟^{a b}, 叶邦角^{a b}

a State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China;
b Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2012-12-15 修回日期:2013-04-07 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities and the National Natural Science Fundation of China (Grant Nos. 11105139 and 11175171).

Effect of vacancy charge state on positron annihilation in silicon

Liu Jian-Dang (刘建党)^{a b}, Cheng Bin (成斌)^{a b}, Kong Wei (孔伟)^{a b}, Ye Bang-Jiao (叶邦角)^{a b}

a State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026, China;
b Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China

Received:2012-12-15 Revised:2013-04-07 Online:2013-08-30 Published:2013-08-30
Contact: Ye Bang-Jiao E-mail:bjye@ustc.edu.cn
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities and the National Natural Science Fundation of China (Grant Nos. 11105139 and 11175171).

摘要/Abstract

摘要： The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseudopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simulation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.

关键词: vacancy, charge state, positron annihilation

Abstract: The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseudopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simulation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.

Key words: vacancy, charge state, positron annihilation

中图分类号: (Vacancies)

61.72.jd

71.55.-i (Impurity and defect levels) 78.70.Bj (Positron annihilation)

刘建党, 成斌, 孔伟, 叶邦角. Effect of vacancy charge state on positron annihilation in silicon[J]. 中国物理B, 2013, 22(10): 106104-106104.

Liu Jian-Dang (刘建党), Cheng Bin (成斌), Kong Wei (孔伟), Ye Bang-Jiao (叶邦角). Effect of vacancy charge state on positron annihilation in silicon[J]. Chin. Phys. B, 2013, 22(10): 106104-106104.

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Effect of vacancy charge state on positron annihilation in silicon

Effect of vacancy charge state on positron annihilation in silicon

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