中国物理B ›› 2012, Vol. 21 ›› Issue (3): 34206-034206.doi: 10.1088/1674-1056/21/3/034206

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

赵振波,徐晨,解意洋,周康,刘发,沈光地   

  • 收稿日期:2011-04-21 修回日期:2011-06-05 出版日期:2012-02-15 发布日期:2012-02-15
  • 通讯作者: 徐晨,xuchen58@bjut.edu.cn E-mail:xuchen58@bjut.edu.cn

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

Zhao Zhen-Bo(赵振波), Xu Chen(徐晨), Xie Yi-Yang(解意洋), Zhou Kang(周康), Liu Fa(刘发), and Shen Guang-Di(沈光地)   

  1. Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • Received:2011-04-21 Revised:2011-06-05 Online:2012-02-15 Published:2012-02-15
  • Contact: Xu Chen,xuchen58@bjut.edu.cn E-mail:xuchen58@bjut.edu.cn
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the National Natural Science Foundation of China (Grant No. 61076044), and the Natural Science Foundation of Beijing, China (Grant Nos. 4092007 and 4102003).

Abstract: A multi-hole vertical-cavity surface-emitting laser (VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-reflector of an oxidation-confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10? are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter-hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.

Key words: single mode, low threshold current, multi-hole, vertical-cavity surface-emitting laser

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation) 42.62.Fi (Laser spectroscopy)