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Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing[J]. 中国物理B, 2022, 31(9): 98503-098503. |
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Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Introducing voids around the interlayer of AlN by high temperature annealing[J]. 中国物理B, 2022, 31(7): 76104-076104. |
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Qingze Li(李青泽), Xiping Chen(陈喜平), Lei Xie(谢雷), Tiexin Han(韩铁鑫), Jiacheng Sun(孙嘉程), and Leiming Fang(房雷鸣). In-situ ultrasonic calibrations of pressure and temperature in a hinge-type double-stage cubic large volume press[J]. 中国物理B, 2022, 31(6): 60702-060702. |
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Guang-Tong Zhou(周广通), Yu-Hu Mu(穆玉虎), Yuan-Wen Song(宋元文), Zhuang-Fei Zhang(张壮飞), Yue-Wen Zhang(张跃文), Wei-Xia Shen(沈维霞), Qian-Qian Wang(王倩倩), Biao Wan(万彪), Chao Fang(房超), Liang-Chao Chen(陈良超), Ya-Dong Li(李亚东), and Xiao-Peng Jia(贾晓鹏). Synergistic influences of titanium, boron, and oxygen on large-size single-crystal diamond growth at high pressure and high temperature[J]. 中国物理B, 2022, 31(6): 68103-068103. |
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Yong Li(李勇), Xiaozhou Chen(陈孝洲), Maowu Ran(冉茂武), Yanchao She(佘彦超), Zhengguo Xiao(肖政国), Meihua Hu(胡美华), Ying Wang(王应), and Jun An(安军). Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond[J]. 中国物理B, 2022, 31(4): 46107-046107. |
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Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film[J]. 中国物理B, 2022, 31(1): 14402-014402. |
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Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302. |
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Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing[J]. 中国物理B, 2021, 30(8): 86109-086109. |
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Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors[J]. 中国物理B, 2021, 30(7): 77303-077303. |
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Qing Yu(余晴), Yi-Fei Zhang(张翼飞), Chang-Hao Zhao(赵昌昊), Kai-Yong He(何楷泳), Ru-Tian Huang(黄汝田), Yong-Cheng He(何永成), Xin-Yu Wu(吴歆宇), Jian-She Liu(刘建设), and Wei Chen(陈炜). Fabrication and characterization of Al-Mn superconducting films for applications in TES bolometers[J]. 中国物理B, 2021, 30(7): 77402-077402. |
[11] |
Xin-Yuan Miao(苗辛原), Hong-An Ma(马红安), Zhuang-Fei Zhang(张壮飞), Liang-Chao Chen(陈良超), Li-Juan Zhou(周丽娟), Min-Si Li(李敏斯), and Xiao-Peng Jia(贾晓鹏). Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility[J]. 中国物理B, 2021, 30(6): 68102-068102. |
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Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films[J]. 中国物理B, 2021, 30(6): 67307-067307. |
[13] |
Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Understanding the synergistic effect of mixed solvent annealing on perovskite film formation[J]. 中国物理B, 2021, 30(6): 68103-068103. |
[14] |
Danqing Zhou(周丹晴), Dongyu Li(李东彧), Yuhan Chen(陈钰焓), Minjian Wu(吴旻剑), Tong Yang(杨童), Hao Cheng(程浩), Yuze Li(李昱泽), Yi Chen(陈艺), Yue Li(李越), Yixing Geng(耿易星), Yanying Zhao(赵研英), Chen Lin(林晨), Xueqing Yan(颜学庆), and Ziqiang Zhao(赵子强). Preparation of graphene on SiC by laser-accelerated pulsed ion beams[J]. 中国物理B, 2021, 30(11): 116106-116106. |
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李勇, 谭德斌, 王强, 肖政国, 田昌海, 陈琳. Crystallization and characteristics of {100}-oriented diamond with CH4N2S additive under high pressure and high temperature[J]. 中国物理B, 2020, 29(9): 98103-098103. |