中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/21/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Implementation of an analogue model of a memristor based on a light-dependent resistor

王晓媛a, Andrew L. Fitchb, Herbert H. C. Iub, Victor Sreeramb, Qi Wei-Guia   

  1. a School of Electrical Engineering, Harbin Institute of Technology, Harbin 150001, China;
    b School of Electrical, Electronic, and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley, WA 6009, Australia
  • 收稿日期:2012-03-03 修回日期:2012-04-09 出版日期:2012-09-01 发布日期:2012-09-01

Implementation of an analogue model of a memristor based on a light-dependent resistor

Wang Xiao-Yuan (王晓媛)a, Andrew L. Fitchb, Herbert H. C. Iub, Victor Sreeramb, Qi Wei-Guia   

  1. a School of Electrical Engineering, Harbin Institute of Technology, Harbin 150001, China;
    b School of Electrical, Electronic, and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley, WA 6009, Australia
  • Received:2012-03-03 Revised:2012-04-09 Online:2012-09-01 Published:2012-09-01
  • Contact: Wang Xiao-Yuan E-mail:youyuan-0213@163.com

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摘要： In this paper, an analogue model of a memristor using a light-dependent resistor (LDR) is presented. This model can be simplified into two parts: a control circuit and a variable resistor. It can be used to easily verify theoretical presumptions about the switching properties of memristors. This LDR-based memristor model can also be used in both simulations and experiments for future research into memristor applications. The paper includes mathematical models, simulations, and experimental results.

关键词: analogue model, light-dependent resistor, memristor, simulator

Abstract: In this paper, an analogue model of a memristor using a light-dependent resistor (LDR) is presented. This model can be simplified into two parts: a control circuit and a variable resistor. It can be used to easily verify theoretical presumptions about the switching properties of memristors. This LDR-based memristor model can also be used in both simulations and experiments for future research into memristor applications. The paper includes mathematical models, simulations, and experimental results.

Key words: analogue model, light-dependent resistor, memristor, simulator

中图分类号:  (Superconducting logic elements and memory devices; microelectronic circuits)

  • 85.25.Hv
07.50.Ek (Circuits and circuit components)