Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

doi:10.1088/1674-1056/20/3/037501

中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37501-037501.doi: 10.1088/1674-1056/20/3/037501

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

廖达前¹, 刘学超², 陈之战², 施尔畏², 周克谨³

(1)Department of Physics, The University of Warwick, Coventry, CV4 7AL, United Kingdom; (2)Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; (3)Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland

收稿日期:2010-05-21 修回日期:2010-10-09 出版日期:2011-03-15 发布日期:2011-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

Liu Xue-Chao(刘学超)^a), Chen Zhi-Zhan(陈之战)^a)†, Shi Er-Wei(施尔畏)^a), Liao Da-Qian(廖达前)^b), and Zhou Ke-Jin(周克谨)^c)

^a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; ^b Department of Physics, The University of Warwick, Coventry, CV4 7AL, United Kingdom; ^c Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland

Received:2010-05-21 Revised:2010-10-09 Online:2011-03-15 Published:2011-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

摘要/Abstract

摘要： This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co²⁺ and Ga³⁺ ions substitute for Zn²⁺ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

关键词: diluted magnetic semiconductors, (Ga, Co)-codoped ZnO, anomalous Hall effect, magnetroresisance

Abstract: This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co²⁺ and Ga³⁺ ions substitute for Zn²⁺ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Key words: diluted magnetic semiconductors, (Ga, Co)-codoped ZnO, anomalous Hall effect, magnetroresisance

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.70.-i (Magnetic properties of thin films, surfaces, and interfaces) 75.70.Tj (Spin-orbit effects) 78.70.Dm (X-ray absorption spectra)

刘学超, 陈之战, 施尔畏, 廖达前, 周克谨. Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films[J]. 中国物理B, 2011, 20(3): 37501-037501.

Liu Xue-Chao(刘学超), Chen Zhi-Zhan(陈之战), Shi Er-Wei(施尔畏), Liao Da-Qian(廖达前), and Zhou Ke-Jin(周克谨). Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films[J]. Chin. Phys. B, 2011, 20(3): 37501-037501.

参考文献 33

[1]	Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Science 294 1488
[2]	Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[3]	Sato K and Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555
[4]	Kim J H, Kim H, Kim D and Ihm Y E 2002 J. Appl. Phys. 92 6066
[5]	Yu Z, Li X, Long X, Cheng X W, Liu Y and Cao C B 2009 Chin. Phys. B 18 3040
[6]	Fouchet A, Prellier W and Mercey B 2006 J. Appl. Phys. 100 013901
[7]	Sharma V K and Varma G D 2009 J. Appl. Phys. 105 07C510
[8]	Liu X C, Lu Z H and Zhang F M 2010 Chin. Phys. B 19 027502
[9]	Liu Y L and Macmanus-Driscoll J L 2009 Appl. Phys. Lett. 94 022503
[10]	Venkatesan M, Stamenov P, Dorneles L S, Gunning R D, Bernoux B and Coey J M 2007 Appl. Phys. Lett. 90 242508
[11]	Rode K, Mattana R, Anane A, Cros V, Jacquet E, Contour J P, Petrof F and Fert A 2008 Appl. Phys. Lett. 92 012509
[12]	Gao L and Zhang J M 2009 Chin. Phys. B 18 4536
[13]	Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat. Mater. 4 173
[14]	Liu X J, Song C, Zeng F and Pan F 2007 J. Phys.: Condens. Matter 19 296208
[15]	Ohno H 1998 Science 281 951
[16]	Toyosaki H, Fukumura T, Yamada Y, Nakajima K, Chikyow T, Hasegawa T, Koinuma H and Kawasaki M 2004 Nat. Mater. 3 221
[17]	Philip J, Punnoose A, Kim B I, Reddy K M, Layne S, Holmes J O, Satpati B, Leclair P R, Santos T S and Moodera J S 2006 Nat. Mater. 5 298
[18]	Liu X C , Shi E W , Chen Z Z , Zhang H W and Song L X 2006 Acta Phys. Sin. 55 2557 (in Chinese)
[19]	Osada M, Sakemi T and Yamamoto T 2006 Thin Solid Films 494 38
[20]	Park S M, Ikegami T, Ebihara K and Shin P K 2006 Appl. Surf. Sci. 253 1522
[21]	Liu X C, Shi E W, Chen Z Z, Chen B Y, Zhang T, Song L X, Zhou K J, Cui M Q, Yan W S, Xie Z, He B and Wei S Q 2008 J. Phys.: Condens. Matter 20 025208
[22]	Jungwirth T, Niu Q and Macdonald A H 2002 Phys. Rev. Lett. 88 207208
[23]	Jungwirth T, Sinova J, Wang K Y, Edmonds K W, Campion R P, Gallagher B L, Foxon C T, Niu Q and Macdonald A H 2003 Appl. Phys. Lett. 83 320
[24]	Yang Z, Biasini M, Beyermann W P, Katz M B, Ezekoye O K, Pan X Q, Pu Y, Shi J, Zuo Z and Liu J L 2008 J. Appl. Phys. 104 113712
[25]	Wang J, Gu Z B, Lu M H, Wu D, Yuan C S, Zhang S T, Chen Y F, Zhu S N and Zhu Y Y 2005 Appl. Phys. Lett. 88 252110
[26]	Andrearczyk T, Jaroszynski J, Grabecki G, Dietl T, Fukumura T and Kawasaki M 2005 Phys. Rev. B 72 121309 (R)
[27]	Xu Q, Hartmann L, Schmidt H, Hochmuth H, Lorenz M, Schmidt-Grund R, Spemann D and Grundmann M 2006 J. Appl. Phys. 100 013904
[28]	Masuko K, Shida A, Yoshimura T and Fujimura N 2009 Phys. Rev. B 80 125313
[29]	Sawicki M, Dietl T, Kossut J, Igalson J, Wojtowicz T and Plesiewicz W 1986 Phys. Rev. Lett. 56 508
[30]	Gacic M, Jakob G, Herbort C and Adrian H 2007 Phys. Rev. B 75 205206
[31]	Reuss F, Frank S, Kirchner C, Kling R, Gruber T and Waag A 2005 Appl. Phys. Lett. 87 112104
[32]	Lu Z L, Zou W Q, Xu M X and Zhang F M 2010 Chin. Phys. B 19 056101
[33]	Murakami M, Matsumoto Y and Hasegawa T 2004 J. Appl. Phys. 95 5330 endfootnotesize

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

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