中国物理B ›› 2017, Vol. 26 ›› Issue (3): 38102-038102.doi: 10.1088/1674-1056/26/3/038102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

Yang He(何洋), Yu-run Sun(孙玉润), Yongming Zhao(赵勇明), Shuzhen Yu(于淑珍), Jianrong Dong(董建荣)   

  1. 1 Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2016-11-08 修回日期:2016-12-13 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: Jianrong Dong E-mail:jrdong2007@sinano.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065).

Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

Yang He(何洋)1,2, Yu-run Sun(孙玉润)1, Yongming Zhao(赵勇明)1,2, Shuzhen Yu(于淑珍)1, Jianrong Dong(董建荣)1   

  1. 1 Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-11-08 Revised:2016-12-13 Online:2017-03-05 Published:2017-03-05
  • Contact: Jianrong Dong E-mail:jrdong2007@sinano.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376065).

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摘要： Compositionally undulating step-graded Al(Ga)InxAs (x=0.05-0.52) buffers with the following InP layer were grown by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs with a 15° miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and (004) reciprocal space maps (RSM) along two orthogonal <110> directions. The results suggested that such reverse-graded layers have different effects on α and β dislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of -1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.

关键词: Al(Ga)InAs reverse-graded layers, dislocation distribution, tilt

Abstract: Compositionally undulating step-graded Al(Ga)InxAs (x=0.05-0.52) buffers with the following InP layer were grown by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs with a 15° miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and (004) reciprocal space maps (RSM) along two orthogonal <110> directions. The results suggested that such reverse-graded layers have different effects on α and β dislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of -1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.

Key words: Al(Ga)InAs reverse-graded layers, dislocation distribution, tilt

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.05.-t (Specific materials: fabrication, treatment, testing, and analysis)