中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127305-127305.doi: 10.1088/1674-1056/20/12/127305

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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

张凯1, 张进成1, 郝跃1, 焦颖2, 马平2, 贺强2, 马骥刚2, 张会龙2, 马晓华3   

  1. (1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China; (3)School of Technical Physics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-05-26 修回日期:2011-07-20 出版日期:2011-12-15 发布日期:2011-12-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities (Grant No. K50510250006).

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

Ma Xiao-Hua(马晓华)a)b), Jiao Ying(焦颖) a), Ma Ping(马平)a), He Qiang(贺强)a), Ma Ji-Gang(马骥刚)a) , Zhang Kai(张凯)b), Zhang Hui-Long(张会龙)a), Zhang Jin-Cheng(张进成) b), and Hao Yue(郝跃)b)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2011-05-26 Revised:2011-07-20 Online:2011-12-15 Published:2011-12-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities (Grant No. K50510250006).

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摘要： In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, VDS =0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

关键词: inverse piezoelectric effects, degradation mechanisms, hot electron effects, DC electrical step stresses, AlGaN/GaN HEMTs, reliability

Abstract: In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, VDS =0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

Key words: inverse piezoelectric effects, degradation mechanisms, hot electron effects, DC electrical step stresses, AlGaN/GaN HEMTs, reliability

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)