中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127306-127306.doi: 10.1088/1674-1056/20/12/127306

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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

乐伶聪1, 赵德刚1, 吴亮亮1, 邓懿1, 江德生1, 朱建军1, 刘宗顺1, 王辉1, 张书明1, 杨辉2, 张宝顺3   

  1. (1)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; (3)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
  • 收稿日期:2011-05-03 修回日期:2011-06-27 出版日期:2011-12-15 发布日期:2011-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z401).

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

Le Ling-Cong(乐伶聪)a), Zhao De-Gang(赵德刚)a)†, Wu Liang-Liang(吴亮亮)a), Deng Yi(邓懿)a), Jiang De-Sheng(江德生)a), Zhu Jian-Jun(朱建军)a), Liu Zong-Shun(刘宗顺)a), Wang Hui(王辉)a), Zhang Shu-Ming(张书明)a),Zhang Bao-Shun(张宝顺)b), and Yang Hui(杨辉)a)b)   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
  • Received:2011-05-03 Revised:2011-06-27 Online:2011-12-15 Published:2011-12-15
  • Supported by:
    Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, and 60776047), the National Basic Research Program of China (Grant No. 2007CB936700), and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z401).

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摘要： In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.

关键词: X-ray diffraction, metalorganic chemical vapour deposition, nitrides

Abstract: In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.

Key words: X-ray diffraction, metalorganic chemical vapour deposition, nitrides

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 61.05.cp (X-ray diffraction)