Antiresonance induced spin-polarized current generation

doi:10.1088/1674-1056/20/12/127201

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127201-127201.doi: 10.1088/1674-1056/20/12/127201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Antiresonance induced spin-polarized current generation

尹笋, 闵文静, 高琨, 解士杰, 刘德胜

Department of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2011-05-17 修回日期:2011-05-21 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10904082 and 10875072).

Antiresonance induced spin-polarized current generation

Yin Sun(尹笋)^†, Min Wen-Jing(闵文静), Gao Kun(高琨) Xie Shi-Jie(解士杰), and Liu De-Sheng(刘德胜)

Department of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2011-05-17 Revised:2011-05-21 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10904082 and 10875072).

摘要/Abstract

摘要： According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Abstract: According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

Key words: antiresonance, spin-polarized current, impurity

中图分类号: (Spin polarized transport)

72.25.-b

73.23.Hk (Coulomb blockade; single-electron tunneling)

尹笋, 闵文静, 高琨, 解士杰, 刘德胜. Antiresonance induced spin-polarized current generation[J]. 中国物理B, 2011, 20(12): 127201-127201.

Yin Sun(尹笋), Min Wen-Jing(闵文静), Gao Kun(高琨) Xie Shi-Jie(解士杰), and Liu De-Sheng(刘德胜) . Antiresonance induced spin-polarized current generation[J]. Chin. Phys. B, 2011, 20(12): 127201-127201.

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Antiresonance induced spin-polarized current generation

Antiresonance induced spin-polarized current generation

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