Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

doi:10.1088/1674-1056/20/1/018501

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/20/1/018501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

陈亮, 张万荣, 金冬月, 沈珮, 谢红云, 丁春宝, 肖盈, 孙博韬, 王任卿

College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

收稿日期:2010-05-26 修回日期:2010-06-23 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059 and 61006044), the Beijing Municipal Natural Science Foundation, China (Grant No. 4082007), and the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015 and KM200910005001).

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

Chen Liang(陈亮)^†, Zhang Wan-Rong(张万荣), Jin Dong-Yue(金冬月), Shen Pei(沈珮), Xie Hong-Yun(谢红云), Ding Chun-Bao(丁春宝),Xiao Ying(肖盈),Sun Bo-Tao(孙博韬), and Wang Ren-Qing(王任卿)

College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Received:2010-05-26 Revised:2010-06-23 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60776051, 61006059 and 61006044), the Beijing Municipal Natural Science Foundation, China (Grant No. 4082007), and the Beijing Municipal Education Committee, China (Grant Nos. KM200710005015 and KM200910005001).

摘要/Abstract

摘要： A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.

Abstract: A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.

Key words: heterojunction bipolar transistor, thermal coupling, power dissipation

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

72.15.Jf (Thermoelectric and thermomagnetic effects) 44.10.+i (Heat conduction)

陈亮, 张万荣, 金冬月, 沈珮, 谢红云, 丁春宝, 肖盈, 孙博韬, 王任卿. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing[J]. 中国物理B, 2011, 20(1): 18501-018501.

Chen Liang(陈亮), Zhang Wan-Rong(张万荣), Jin Dong-Yue(金冬月), Shen Pei(沈珮), Xie Hong-Yun(谢红云), Ding Chun-Bao(丁春宝),Xiao Ying(肖盈),Sun Bo-Tao(孙博韬), and Wang Ren-Qing(王任卿) . Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing[J]. Chin. Phys. B, 2011, 20(1): 18501-018501.

参考文献 16

[1]	Ma L and Gao Y 2009 Chin. Phys. B 18 303
[2]	Cao Y R, Hao Y, Hu S G and Ma X H 2009 Chin. Phys. B 18 309
[3]	Liou L L, Bayraktaroglu B and Huang C I 1996 Solid-State Electron. 39 165
[4]	Zhou W, Sheu S, Liou J J and Huang C I 1998 Solid-State Electron. 42 693
[5]	Cao Q J and Zhang Y M 2008 Chin. Phys. B 17 4622
[6]	Pu L, Shi Y, Zhang R, Zhang Y Q and Zheng Y D 2008 Acta Phys. Sin. 57 5198 (in Chinese)
[7]	Lai C J, Li Z H, Li Z J, Zhang B and Zhang Y R 2009 Chin. Phys. B 18 763
[8]	Hao Y, Li J and Liu H X 2006 Acta Phys. Sin. 55 2508 (in Chinese)
[9]	Chen L D, Cui P, Jiang J, Li Y L, Wang G, Wu T and Xu G J 2007 Acta Phys. Sin. 56 2858 (in Chinese)
[10]	Che Y, L"u H L, Zhang Y M and Zhang Y M 2008 Chin. Phys. B 17 1410
[11]	Olsson J 2001 Microelectron. Eng. 56 339
[12]	Chang Y C, Du G, Song J F, Wang S X, Luo H L, Ge W K, Wang J N and Wang Y 2002 Solid-State Electron. 46 1997
[13]	Comeau J P, Najafizadeh L, Andrews J M, Prakash A P G and Cressler J D 2007 IEEE Microw. Wirel. Compon. Lett 17 349
[14]	Adlerstein M G 1998 IEEE Trans. on Elec Dev 45 1653
[15]	Liu W and Bayraktaroglu B 1993 Solid-State Electron. 36 125
[16]	Maycock P D 1967 Solid-State Electron. 10 61 endfootnotesize

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

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