中国物理B ›› 2010, Vol. 19 ›› Issue (10): 104206-104206.doi: 10.1088/1674-1056/19/10/104206

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Measurement of the carrier recovery time in SOA based on four-wave mixing on narrow-band ASE spectrum

程乘, 张新亮, 张羽, 刘磊, 黄德修   

  1. Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2009-12-22 修回日期:2010-05-24 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by National High Technology Research and Development Program of China (Grant No. 2006AA03Z414), the National Natural Science Foundation of China (Grant No. 60877056), and the Science Fund for Distinguished Young Scholars of Hubei Province of China (Grant No. 2006ABB017).

Measurement of the carrier recovery time in SOA based on four-wave mixing on narrow-band ASE spectrum

Cheng Cheng(程乘), Zhang Xin-Liang(张新亮)†ger, Zhang Yu(张羽), Liu Lei(刘磊), and Huang De-Xiu(黄德修)   

  1. Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2009-12-22 Revised:2010-05-24 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by National High Technology Research and Development Program of China (Grant No. 2006AA03Z414), the National Natural Science Foundation of China (Grant No. 60877056), and the Science Fund for Distinguished Young Scholars of Hubei Province of China (Grant No. 2006ABB017).

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摘要： Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing of narrow-band amplified spontaneous emission (ASE) spectra is presented. The results show the carrier times are 50.2, 44.6, and 23.6 ps when the injected currents are 120, 180, and 240 mA, respectively, which are in agreement with the nominal values of the sample.

Abstract: Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing of narrow-band amplified spontaneous emission (ASE) spectra is presented. The results show the carrier times are 50.2, 44.6, and 23.6 ps when the injected currents are 120, 180, and 240 mA, respectively, which are in agreement with the nominal values of the sample.

Key words: amplified spontaneous emission, narrow band, nearly degenerate four-wave mixing, semiconductor optical amplifier

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Lh (Efficiency, stability, gain, and other operational parameters) 42.62.Eh (Metrological applications; optical frequency synthesizers for precision spectroscopy) 42.65.Ky (Frequency conversion; harmonic generation, including higher-order harmonic generation)