中国物理B ›› 2010, Vol. 19 ›› Issue (1): 17306-017306.doi: 10.1088/1674-1056/19/1/017306

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Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

任凡, 郝智彪, 王磊, 汪莱, 李洪涛, 罗毅   

  1. Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua U
  • 收稿日期:2009-05-20 修回日期:2009-06-22 出版日期:2010-01-15 发布日期:2010-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Ren Fan(任凡), Hao Zhi-Biao(郝智彪)†, Wang Lei(王磊), Wang Lai(汪莱), Li Hong-Tao (李洪涛), and Luo Yi(罗毅)   

  1. Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China;State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2009-05-20 Revised:2009-06-22 Online:2010-01-15 Published:2010-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105), and the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321).

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摘要： SiN_x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN_x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN_x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.

Abstract: SiN$_x$ is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN$_x$ passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN$_x$ films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.

Key words: SiNx passivation, plasma-enhanced chemical vapour deposition, AlGaN/GaN heterostructure, current collapse

中图分类号:  (Field effect devices)

  • 85.30.Tv
52.77.Dq (Plasma-based ion implantation and deposition) 73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.65.Rv (Passivation)