中国物理B ›› 2009, Vol. 18 ›› Issue (5): 2016-2023.doi: 10.1088/1674-1056/18/5/048

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies

刘飞, 苏赞加, 梁炜杰, 莫富尧, 李力, 邓少芝, 陈军, 许宁生   

  1. Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
  • 收稿日期:2009-02-13 修回日期:2009-02-23 出版日期:2009-05-20 发布日期:2009-05-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No 2007CB935500), the National High Technology Research and Development Program of China (Grant No 2007AA03Z305), the National Science Foundation for Young Scientists of China (Grant

Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies

Liu Fei(刘飞)†, Su Zan-Jia(苏赞加), Liang Wei-Jie(梁炜杰), Mo Fu-Yao(莫富尧), Li Li(李力), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生)   

  1. Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
  • Received:2009-02-13 Revised:2009-02-23 Online:2009-05-20 Published:2009-05-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No 2007CB935500), the National High Technology Research and Development Program of China (Grant No 2007AA03Z305), the National Science Foundation for Young Scientists of China (Grant

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摘要： The controllable growth of three different morphologies of AlN nanostructures (nanorod, nanotip and nanocrater) arrays are successfully realized by using chemical vapour deposition (CVD) technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid (VLS) mechanism. To investigate the factors affecting field emission (FE) properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AlN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2~V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.

Abstract: The controllable growth of three different morphologies of AlN nanostructures (nanorod, nanotip and nanocrater) arrays are successfully realized by using chemical vapour deposition (CVD) technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid (VLS) mechanism. To investigate the factors affecting field emission (FE) properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AlN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2~V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.

Key words: AlN, field emission (FE), vapour-liquid-solid (VLS), chemical vapour deposition (CVD)

中图分类号:  (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

  • 68.65.-k
61.46.-w (Structure of nanoscale materials) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 79.70.+q (Field emission, ionization, evaporation, and desorption) 72.70.+m (Noise processes and phenomena) 73.63.-b (Electronic transport in nanoscale materials and structures)