中国物理B ›› 2022, Vol. 31 ›› Issue (7): 77101-077101.doi: 10.1088/1674-1056/ac6739

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Charge density wave states in phase-engineered monolayer VTe2

Zhi-Li Zhu(朱知力)1, Zhong-Liu Liu(刘中流)1, Xu Wu(武旭)2,1, Xuan-Yi Li(李轩熠)1, Jin-An Shi(时金安)1, Chen Liu(刘晨)3, Guo-Jian Qian(钱国健)1, Qi Zheng(郑琦)1, Li Huang(黄立)1, Xiao Lin(林晓)1, Jia-Ou Wang(王嘉欧)3, Hui Chen(陈辉)1, Wu Zhou(周武)1, Jia-Tao Sun(孙家涛)2,1, Ye-Liang Wang(王业亮)2,1,†, and Hong-Jun Gao(高鸿钧)1,‡   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
    2 MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China;
    3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100084, China
  • 收稿日期:2022-03-07 修回日期:2022-04-11 接受日期:2022-04-14 出版日期:2022-06-09 发布日期:2022-07-19
  • 通讯作者: Ye-Liang Wang, Hong-Jun Gao E-mail:yeliang.wang@bit.edu.cn;hjgao@iphy.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400100, 2020YFA0308800, and 2019YFA0308000), the National Natural Science Foundation of China (Grant Nos. 92163206, 62171035, 62171035, 61901038, 61971035, 61725107, and 61674171), the Beijing Nova Program from Beijing Municipal Science & Technology Commission (Grant No. Z211100002121072), and the Beijing Natural Science Foundation (Grant Nos. Z190006 and 4192054).

Charge density wave states in phase-engineered monolayer VTe2

Zhi-Li Zhu(朱知力)1, Zhong-Liu Liu(刘中流)1, Xu Wu(武旭)2,1, Xuan-Yi Li(李轩熠)1, Jin-An Shi(时金安)1, Chen Liu(刘晨)3, Guo-Jian Qian(钱国健)1, Qi Zheng(郑琦)1, Li Huang(黄立)1, Xiao Lin(林晓)1, Jia-Ou Wang(王嘉欧)3, Hui Chen(陈辉)1, Wu Zhou(周武)1, Jia-Tao Sun(孙家涛)2,1, Ye-Liang Wang(王业亮)2,1,†, and Hong-Jun Gao(高鸿钧)1,‡   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
    2 MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China;
    3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100084, China
  • Received:2022-03-07 Revised:2022-04-11 Accepted:2022-04-14 Online:2022-06-09 Published:2022-07-19
  • Contact: Ye-Liang Wang, Hong-Jun Gao E-mail:yeliang.wang@bit.edu.cn;hjgao@iphy.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFA1400100, 2020YFA0308800, and 2019YFA0308000), the National Natural Science Foundation of China (Grant Nos. 92163206, 62171035, 62171035, 61901038, 61971035, 61725107, and 61674171), the Beijing Nova Program from Beijing Municipal Science & Technology Commission (Grant No. Z211100002121072), and the Beijing Natural Science Foundation (Grant Nos. Z190006 and 4192054).

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摘要： Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

关键词: charge density wave, H-VTe2, phase engineering, transitional metal dichalcogenides

Abstract: Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2\sqrt 3 \times 2\sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

Key words: charge density wave, H-VTe2, phase engineering, transitional metal dichalcogenides

中图分类号:  (Charge-density-wave systems)

  • 71.45.Lr
64.60.-i (General studies of phase transitions) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)