中国物理B ›› 2009, Vol. 18 ›› Issue (5): 2012-2015.doi: 10.1088/1674-1056/18/5/047

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Raman scattering of polycrystalline GaSb thin films grownby co-evapouration process

乔在祥, 孙云, 何炜瑜, 刘玮, 何青, 李长健   

  1. The Tianjin Key Laboratory for Photoelectronics Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
  • 收稿日期:2008-07-26 修回日期:2008-11-18 出版日期:2009-05-20 发布日期:2009-05-20
  • 基金资助:
    Project supported by the National 863 Program of China (Grant No 2004AA513020).

Raman scattering of polycrystalline GaSb thin films grown by the co-evapouration process

Qiao Zai-Xiang(乔在祥)†, Sun Yun(孙云), He Wei-Yu(何炜瑜), Liu Wei(刘玮), He Qing(何青), and Li Chang-Jian(李长健)   

  1. The Tianjin Key Laboratory for Photoelectronics Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
  • Received:2008-07-26 Revised:2008-11-18 Online:2009-05-20 Published:2009-05-20
  • Supported by:
    Project supported by the National 863 Program of China (Grant No 2004AA513020).

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摘要： This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb--A1g/GaSb--TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical (TO) mode intensity is stronger than that of the longitudinal optical (LO) mode, which indicates that all the samples are disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0~GPa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

关键词: GaSb, co-evaporation, Raman, stress

Abstract: This paper reports that GaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb--A1g/GaSb--TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical (TO) mode intensity is stronger than that of the longitudinal optical (LO) mode, which indicates that all the samples are disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the GaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline GaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

Key words: GaSb, co-evaporation, Raman, stress

中图分类号:  (Nucleation and growth)

  • 68.55.A-
78.30.Fs (III-V and II-VI semiconductors) 78.66.Fd (III-V semiconductors) 68.60.Bs (Mechanical and acoustical properties) 81.05.Ea (III-V semiconductors)