中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5457-5461.doi: 10.1088/1674-1056/18/12/054

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The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures

许志豪, 张进成, 张忠芬, 朱庆玮, 段焕涛, 郝跃   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-01-09 修回日期:2009-04-12 出版日期:2009-12-20 发布日期:2009-12-20
  • 基金资助:
    Project supported by the State Key Program of National Natural Science Foundation of China (Grant No 60736033) and the National Key Science and Technology Special Project (Grant No 2008ZX 0101002-003).

The effects of vicinal sapphire substrates on the properties of AlGaN/GaN heterostructures

Xu Zhi-Hao(许志豪)†, Zhang Jin-Cheng(张进成), Zhang Zhong-Fen(张忠芬), Zhu Qing-Wei(朱庆玮), Duan Huan-Tao(段焕涛), and Hao Yue(郝跃)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2009-01-09 Revised:2009-04-12 Online:2009-12-20 Published:2009-12-20
  • Supported by:
    Project supported by the State Key Program of National Natural Science Foundation of China (Grant No 60736033) and the National Key Science and Technology Special Project (Grant No 2008ZX 0101002-003).

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摘要： AlGaN/GaN heterostructures on vicinal sapphire substrates and just-oriented sapphire substrates (0001) are grown by the metalorganic chemical vapor deposition method. Samples are studied by high-resolution x-ray diffraction, atomic force microscopy, capacitance--voltage measurement and the Van der Pauw Hall-effect technique. The investigation reveals that better crystal quality and surface morphology of the sample are obtained on the vicinal substrate. Furthermore, the electrical properties are also improved when the sample is grown on the vicinal substrate. This is due to the fact that the use of vicinal substrate can promote the step-flow mode of crystal growth, so many macro-steps are formed during crystal growth, which causes a reduction of threading dislocations in the crystal and an improvement in the electrical properties of the AlGaN/GaN heterostructure.

Abstract: AlGaN/GaN heterostructures on vicinal sapphire substrates and just-oriented sapphire substrates (0001) are grown by the metalorganic chemical vapor deposition method. Samples are studied by high-resolution x-ray diffraction, atomic force microscopy, capacitance--voltage measurement and the Van der Pauw Hall-effect technique. The investigation reveals that better crystal quality and surface morphology of the sample are obtained on the vicinal substrate. Furthermore, the electrical properties are also improved when the sample is grown on the vicinal substrate. This is due to the fact that the use of vicinal substrate can promote the step-flow mode of crystal growth, so many macro-steps are formed during crystal growth, which causes a reduction of threading dislocations in the crystal and an improvement in the electrical properties of the AlGaN/GaN heterostructure.

Key words: GaN, AlGaN/GaN heterostructures, vicinal substrate

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
61.05.cp (X-ray diffraction) 68.37.Ps (Atomic force microscopy (AFM)) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.Ey (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))