中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5437-5442.doi: 10.1088/1674-1056/18/12/051

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Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions under pressure

班士良1, 张敏2   

  1. (1)Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China; (2)Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;College of Physics and Electron Information, Inner Mongolia Normal University, Hohhot 010022, China
  • 收稿日期:2008-08-22 修回日期:2009-08-13 出版日期:2009-12-20 发布日期:2009-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60566002), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070126001).

Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions under pressure

Zhang Min(张敏)a)b) and Ban Shi-Liang(班士良) a)†   

  1. a Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China; b College of Physics and Electron Information, Inner Mongolia Normal University, Hohhot 010022, China
  • Received:2008-08-22 Revised:2009-08-13 Online:2009-12-20 Published:2009-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60566002), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070126001).

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摘要： The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation. The variations of Stark energy shift with electric field, impurity position, Al component and areal electron density are discussed. Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states. For a given impurity position, the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect. The weakening of the blue and red shifts, induced by the screening effect, strengthens gradually with the increase of electric field. Furthermore, the screening effect weakens the mixture crystal effect, thereby influencing the Stark effect. The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.

Abstract: The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation. The variations of Stark energy shift with electric field, impurity position, Al component and areal electron density are discussed. Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states. For a given impurity position, the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect. The weakening of the blue and red shifts, induced by the screening effect, strengthens gradually with the increase of electric field. Furthermore, the screening effect weakens the mixture crystal effect, thereby influencing the Stark effect. The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.

Key words: strained wurtzite heterojunction, Stark effect, screening, pressure

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
62.50.-p (High-pressure effects in solids and liquids) 71.55.Eq (III-V semiconductors) 71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)