中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4456-4459.doi: 10.1088/1674-1056/18/10/058

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Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor

曹全君1, 贾立新1, 张义门2   

  1. (1)Institute of Electronic Science and Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou 310014, China; (2)School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2008-12-21 修回日期:2009-03-13 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project partly supported by National Defense Basic Research Program of China (Grant No 51327010101).

Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor

Cao Quan-Jun(曹全君)a)†, Zhang Yi-Men(张义门)b), and Jia Li-Xin(贾立新)a)   

  1. a Institute of Electronic Science and Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou 310014, China; b School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2008-12-21 Revised:2009-03-13 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project partly supported by National Defense Basic Research Program of China (Grant No 51327010101).

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摘要： Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H--SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H--SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H--SiC MESFETs device.

Abstract: Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H--SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H--SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H--SiC MESFETs device.

Key words: 4H silicon carbide, metal semiconductor field effect transistor, drain induced barrier lowering effect, short channel

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)