中国物理B ›› 2008, Vol. 17 ›› Issue (7): 2730-2738.doi: 10.1088/1674-1056/17/7/063

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

李琛, 廖怀林, 黄如, 王阳元   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2007-09-04 修回日期:2008-01-18 出版日期:2008-07-09 发布日期:2008-07-09
  • 基金资助:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 60625403) and the Collaborative Project between Intel Corporation and Peking University.

A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation

Li Chen(李琛), Liao Huai-Lin (廖怀林)†,Huang Ru(黄如), and Wang Yang-Yuan (王阳元)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2007-09-04 Revised:2008-01-18 Online:2008-07-09 Published:2008-07-09
  • Supported by:
    Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 60625403) and the Collaborative Project between Intel Corporation and Peking University.

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摘要： In this paper, a complementary metal--oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.

Abstract: In this paper, a complementary metal--oxide semiconductor (CMOS)-compatible silicon substrate optimization technique is proposed to achieve effective isolation. The selective growth of porous silicon is used to effectively suppress the substrate crosstalk. The isolation structures are fabricated in standard CMOS process and then this post-CMOS substrate optimization technique is carried out to greatly improve the performances of crosstalk isolation. Three-dimensional electro-magnetic simulation is implemented to verify the obvious effect of our substrate optimization technique. The morphologies and growth condition of porous silicon fabricated have been investigated in detail. Furthermore, a thick selectively grown porous silicon (SGPS) trench for crosstalk isolation has been formed and about 20dB improvement in substrate isolation is achieved. These results demonstrate that our post-CMOS SGPS technique is very promising for RF IC applications.

Key words: substrate optimization, selectively grown porous silicon (SGPS), radio frequency, crosstalk isolation

中图分类号:  (Field effect devices)

  • 85.30.Tv
84.40.Lj (Microwave integrated electronics) 85.30.De (Semiconductor-device characterization, design, and modeling)