中国物理B ›› 2008, Vol. 17 ›› Issue (5): 1869-1873.doi: 10.1088/1674-1056/17/5/054

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Quantum mechanical effects on heat generation in nano-scale MOSFETs

吉 敏, 赵 凯, 杜 刚, 康晋锋, 韩汝琦, 刘晓彦   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2007-08-02 修回日期:2007-11-12 出版日期:2008-05-20 发布日期:2008-05-20
  • 基金资助:
    Project supported by the National Key Basic Research Program of China (Grant No 2006CB302705) and the National Natural Science Foundation of China (Grant No 60776068).

Quantum mechanical effects on heat generation in nano-scale MOSFETs

Ji Min(吉敏), Zhao Kai(赵凯), Du Gang(杜刚), Kang Jin-Feng(康晋锋), Han Ru-Qi(韩汝琦), and Liu Xiao-Yan(刘晓彦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2007-08-02 Revised:2007-11-12 Online:2008-05-20 Published:2008-05-20
  • Supported by:
    Project supported by the National Key Basic Research Program of China (Grant No 2006CB302705) and the National Natural Science Foundation of China (Grant No 60776068).

摘要: The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and $K$ space on the heat generation is investigated.

Abstract: The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and $K$ space on the heat generation is investigated.

Key words: heat generation, quantum potential, collision broadening

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Gk (Tunneling) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))