中国物理B ›› 2008, Vol. 17 ›› Issue (3): 1119-1123.doi: 10.1088/1674-1056/17/3/061

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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy

王占国1, 高宏玲2, 曾一平2, 王宝强2, 朱战平2   

  1. (1)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing rm 100083, China
  • 收稿日期:2007-08-08 修回日期:2007-10-08 出版日期:2008-03-04 发布日期:2008-03-04

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy

Gao Hong-Ling(高宏玲)a)†, Zeng Yi-Ping(曾一平)a), Wang Bao-Qiang(王宝强)a), Zhu Zhan-Ping(朱战平)a), and Wang Zhan-Guo(王占国)b)   

  1. a Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing rm 100083, China; b Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2007-08-08 Revised:2007-10-08 Online:2008-03-04 Published:2008-03-04

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摘要： A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm$^{2}$/(V$\cdot$s) and 3.26$\times $10$^{12}$cm$^{ - 2}$ respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In$_{0.53}$Ga$_{0.47}$As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

关键词: molecular beam epitaxy, semiconducting III--V materials, high electron mobility transistors

Abstract: A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (MBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm$^{2}$/(V$\cdot$s) and 3.26$\times $10$^{12}$cm$^{ - 2}$ respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In$_{0.53}$Ga$_{0.47}$As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

Key words: molecular beam epitaxy, semiconducting III--V materials, high electron mobility transistors

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.Ey (III-V semiconductors) 78.55.Cr (III-V semiconductors) 78.66.Fd (III-V semiconductors) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)