中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1119-1124.doi: 10.1088/1009-1963/16/4/043

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Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

祖小涛1, 苏海桥1, 向霞1, 薛书文2, 郑万国3, 邓宏4, 杨春容4   

  1. (1)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (2)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; (3)Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China; (4)School of Microelectronics and Solid-State Electronics, University of Electronic Science and Techn
  • 收稿日期:2006-08-19 修回日期:2006-09-15 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University (Grant No~NCET-04-0899), the Ph.D. Funding Support Program of Education Ministry of China (Grant No~20050614013), and the NSAF Joint Foundation of China (Grant No~10376006).

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

Xue Shu-Wen(薛书文)a)b), Zu Xiao-Tao(祖小涛)a)† Su Hai-Qiao(苏海桥)a), Zheng Wan-Guo(郑万国)c), Xiang Xia(向霞)a), Deng Hong(邓宏)d), and Yang Chun-Rong(杨春容)d)   

  1. a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; c Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China; d School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2006-08-19 Revised:2006-09-15 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University (Grant No~NCET-04-0899), the Ph.D. Funding Support Program of Education Ministry of China (Grant No~20050614013), and the NSAF Joint Foundation of China (Grant No~10376006).

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摘要： This paper reports that ion implantation to a dose of 1×1017 ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600- 750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at \sim 850℃ and \sim 750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900℃.

关键词: ZnO thin films, thermal annealing, ion implantation, photoluminescence

Abstract: This paper reports that ion implantation to a dose of 1×1017 ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600-750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at $\sim$  850℃ and $\sim$750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600-900℃.

Key words: ZnO thin films, thermal annealing, ion implantation, photoluminescence

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
68.55.-a (Thin film structure and morphology) 78.66.Hf (II-VI semiconductors) 81.20.Fw (Sol-gel processing, precipitation) 78.55.Et (II-VI semiconductors) 61.05.cp (X-ray diffraction)