中国物理B ›› 2007, Vol. 16 ›› Issue (12): 3820-3826.doi: 10.1088/1009-1963/16/12/044

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Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack

黎沛涛1, 李春霞1, 张雪锋2, 徐静平2, 官建国3   

  1. (1)Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China; (2)Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan, 430074, China; (3)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
  • 出版日期:2007-12-20 发布日期:2007-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~60776016), the RGC of HKSAR, China (Grant No~HKU7142/05E), and Open Foundation of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Grant No~

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack

Zhang Xue-Feng(张雪锋)a), Xu Jing-Ping (徐静平)a)† , Lai Pui-To(黎沛涛)b) , Li Chun-Xia(李春霞)b), and Guan Jian-Guo(官建国)c)   

  1. a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical & Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China; c State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
  • Online:2007-12-20 Published:2007-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~60776016), the RGC of HKSAR, China (Grant No~HKU7142/05E), and Open Foundation of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Grant No~

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摘要： A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-$k$ dielectric/SiO$_{2}$ gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO$_{2})$ thickness and permittivities of the high-$k$ dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-$k$ dielectric and interlayer, as well as moderate permittivities of high-$k$ dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data.

关键词: MOSFET, high-k dielectric, SiGe, interface roughness scattering, Coulomb scattering

Abstract: A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-$k$ dielectric/SiO$_{2}$ gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO$_{2})$ thickness and permittivities of the high-$k$ dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-$k$ dielectric and interlayer, as well as moderate permittivities of high-$k$ dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data.

Key words: MOSFET, high-k dielectric, SiGe, interface roughness scattering, Coulomb scattering

中图分类号:  (Field effect devices)

  • 85.30.Tv
77.22.Ch (Permittivity (dielectric function))