中国物理B ›› 2007, Vol. 16 ›› Issue (12): 3827-3831.doi: 10.1088/1009-1963/16/12/045

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Determination of conduction band edge characteristics of strained Si/Si1-xGex

宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 出版日期:2007-12-20 发布日期:2007-12-20
  • 基金资助:
    Project supported by the National Defence Pre-research Foundation of China (Grant Nos~51308040203 and 51408061105DZ0171).

Determination of conduction band edge characteristics of strained Si/Si1-xGex

Song Jian-Jun(宋建军), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Dai Xian-Ying(戴显英), and Xuan Rong-Xi(宣荣喜)   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Online:2007-12-20 Published:2007-12-20
  • Supported by:
    Project supported by the National Defence Pre-research Foundation of China (Grant Nos~51308040203 and 51408061105DZ0171).

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摘要： The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses ($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.

Abstract: The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si$_{1 - x}$Ge$_{x}$ substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K$\cdot$P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses ($m_{\rm l}^{\ast }$ and $m_{\rm t}^{\ast })$ are obtained.

Key words: strained Si/Si$_{1 - x}$Ge$_{x}$, conduction-band, K$\cdot$P method

中图分类号:  (Surface states, band structure, electron density of states)

  • 73.20.At
71.15.-m (Methods of electronic structure calculations) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)