Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses

doi:10.1088/1009-1963/16/11/058

摘要/Abstract

Abstract: The low voltage substrate current (I_b) has been studied based on generation kinetics and used as a monitor of interface states (N_it) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage I_b is formed by electrons tunnelling through interface states, and the variations of I_b($\Delta$I_b) are proportional to variations of N_it ($\Delta$N_it). The N_it energy distributions were determined by differentiating N_it(V_g). The results have been compared with that measured by using gate diode technique.

Key words: interface states, substrate current, ultra-thin oxide, constant voltage stress

中图分类号: (Field effect devices)

85.30.Tv

73.40.Gk (Tunneling) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.De (Semiconductor-device characterization, design, and modeling)

王彦刚, 许铭真, 谭长华. Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses[J]. 中国物理B, 2007, 16(11): 3502-3506.

Wang Yan-Gang(王彦刚), Xu Ming-Zhen(许铭真), and Tan Chang-Hua(谭长华). Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-OSFETs under constant voltage stresses[J]. Chinese Physics, 2007, 16(11): 3502-3506.

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