中国物理B ›› 2007, Vol. 16 ›› Issue (10): 3114-3119.doi: 10.1088/1009-1963/16/10/049

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

陈海峰, 郝 跃, 马晓华, 曹艳荣, 高志远, 龚 欣   

  1. School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-11-22 修回日期:2007-02-08 出版日期:2007-10-08 发布日期:2007-10-08
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60376024).

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

Chen Hai-Feng(陈海峰)†, Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), and Gong Xin(龚欣)   

  1. School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2006-11-22 Revised:2007-02-08 Online:2007-10-08 Published:2007-10-08
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60376024).

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摘要： The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection (LGVHHI), gate-induced drain leakage induced hot-hole injection (GIDLIHHI) and substrate hot-hole injection (SHHI), have different influences on the devices damaged already by the previous hot electron injection (HEI) because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device's performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.

Abstract: The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection (LGVHHI), gate-induced drain leakage induced hot-hole injection (GIDLIHHI) and substrate hot-hole injection (SHHI), have different influences on the devices damaged already by the previous hot electron injection (HEI) because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device's performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.

Key words: lightly doped drain, hot hole injection, gate-induced drain leakage, trapping

中图分类号:  (Field effect devices)

  • 85.30.Tv
72.20.Ht (High-field and nonlinear effects) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 72.30.+q (High-frequency effects; plasma effects) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)