中国物理B ›› 2006, Vol. 15 ›› Issue (3): 636-640.doi: 10.1088/1009-1963/15/3/032

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures

常远程, 张义门, 张玉明   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute, Xidian University, Xi'an 710071,China
  • 收稿日期:2005-06-02 修回日期:2005-11-03 出版日期:2006-03-20 发布日期:2006-03-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904).

Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures

Chang Yuan-Cheng (常远程), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)   

  1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute, Xidian University, Xi'an 710071,China
  • Received:2005-06-02 Revised:2005-11-03 Online:2006-03-20 Published:2006-03-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904).

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摘要： Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band discontinuity at the interface between AlGaN and GaN, the temperature dependence of transconductance for AlGaN/GaN heterojunction field effect transistors (HFETs) has been obtained by using a quasi-two-dimensional approach, and the calculated results are in good agreement with the experimental data. The reduction in transconductance at high temperatures is primarily due to the decrease in electron mobility in the channel. Calculations also demonstrate that the self-heating effect becomes serious as environment temperature increases.

Abstract: Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band discontinuity at the interface between AlGaN and GaN, the temperature dependence of transconductance for AlGaN/GaN heterojunction field effect transistors (HFETs) has been obtained by using a quasi-two-dimensional approach, and the calculated results are in good agreement with the experimental data. The reduction in transconductance at high temperatures is primarily due to the decrease in electron mobility in the channel. Calculations also demonstrate that the self-heating effect becomes serious as environment temperature increases.

Key words: AlGaN/GaN HFETs, transconductance, high temperature

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 72.20.Fr (Low-field transport and mobility; piezoresistance) 73.20.At (Surface states, band structure, electron density of states) 77.65.-j (Piezoelectricity and electromechanical effects) 72.80.Ey (III-V and II-VI semiconductors)