中国物理B ›› 2005, Vol. 14 ›› Issue (4): 808-811.doi: 10.1088/1009-1963/14/4/029

• • 上一篇    下一篇

A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

马仲发, 庄奕琪, 杜磊, 魏珊   

  1. Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an,710071, China
  • 收稿日期:2004-08-18 修回日期:2004-12-08 出版日期:2005-04-20 发布日期:2005-03-28
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60276028), the National Defence Foundation (Grant No 51411040601DZ014) and the Key lab Foundation of National Defence Science $\&$ Technology (Grant No 51433030103DZ01)

A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

Ma Zhong-Fa (马仲发), Zhuang Yi-Qi (庄奕琪), Du Lei (杜磊), Wei Shan (魏珊)   

  1. Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2004-08-18 Revised:2004-12-08 Online:2005-04-20 Published:2005-03-28
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60276028), the National Defence Foundation (Grant No 51411040601DZ014) and the Key lab Foundation of National Defence Science $\&$ Technology (Grant No 51433030103DZ01)

PDF (PC)

579

赞

摘要： Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented,with which the dependence of ${\tau_{\rm c} }/ {\tau_\e }$ (where $\tau_{\rm c} $=capture time, $\tau_\e$=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.

Abstract: Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented,with which the dependence of $\tau_{\rm c}/\tau_{\rm e}$ (where $\tau_{\rm c}$=capture time, $\tau_{\rm e}$=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.

Key words: MOSFET, RTS noise, $\tau_{\rm c}/\tau_{\rm e}$, percolation, model

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))